An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer A thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiO x N y  Also, a thin film comprising SiO x N y is formed under the active layer The active layer includes a metal element at a concentration of 1×10 15 to 1×10 19 cm −3 and hydrogen at a concentration of 2×10 19 to 5×10 21 cm −3 

Semiconductor device and method for forming the same

http://eia.udg.es/%7Eqsalvi/papers/2006-MJ.pdf

Review of CMOS image sensors

An endoscope assembly with a main imaging device and a first light source is configured to provide a forward view of a body cavity, and further includes a detachable imaging device with an attachment member engageable with the distal end region of the endoscope, a linking member connected to the attachment member, and an imaging element with a second light source, wherein the detachable imaging device provides a retrograde view of the body cavity and the main imaging device. Light interference is reduced by using polarizing filters or by alternating the on/off state of the main imaging device, the first light source, the imaging element and the second light source so that the main imaging device and first light source are on when the imaging element and second light source are off and the main imaging device and first light source are off when the imaging element and second light source are on.

Endoscope having detachable imaging device and method of using

An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW_), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.

Switch Circuit and Method of Switching Radio Frequency Signals

PURPOSE:To form a reaction preventive layer having excellent barrier property while enhancing the ohmic characteristics of a semiconductor substrate and the reaction preventive layer. CONSTITUTION:Within the manufacturing method of wiring structure of forming a reaction preventive layer 18 on a semiconductor substrate 11 further forming a wiring connecting to the semiconductor substrate 11 through the intermediary of the reaction preventive layer 18, the forming step of the reaction preventive layer 18 is once to be stopped and then resumed so as to form the second reaction preventive layer 17 formed in the resumed step on the surface of the first reaction preventive film 16. Furthermore, the reaction preventive layer 18 after finishing the forming step is to be heat-treated in the atmosphere containing oxygen at the temperature set up e.g. to exceed 400 deg.C but not to exceed 600 deg.C. This heat treatment step may be performed after finishing the forming step of the first or the second reaction preventive layer 16 or 17.

Manufacture of wiring structure

To improve the speed of AD conversion. An amplifier amplifies, by a magnification larger than 1, signals of a pixel that outputs a signal in which there is no accumulation of a charge by a photon as a reset signal, and outputs a signal in which there is accumulation of a charge by a photon as an accumulation signal. A calculation unit generates an offset amount signal corresponding to an amount of own offset component using the amplified signal, and calculates a digital value corresponding to the own offset component using the generated offset amount signal and accuracy set for AD conversion of the amplified accumulated signal.

Imaging element, imaging device, electronic device, and imaging method to improve speed of analog to digital conversion

An imaging element includes an amplifying transistor. A signal charge from the photodiode is transferable to the gate of amplifying transistor, the photodiode being within a semiconductor substrate. The source and drain of the amplifying transistor are electrically isolated from a semiconductor substrate, wherein the source is within a well or the source and drain are within a silicon-on-insulator layer.

Imaging element and camera system employing a high-concentration layer between a photodiode and an insulation layer, with the insulation layer being between the high-concentration layer and a well of an amplifying transistor

Disclosed is a camera module (2) that comprises a substrate (10) having a through-hole (14) for light transmission, an imaging element (11) having on one side a light receiving portion (15), flip chip mounted on one side of the substrate (10) such that light receiving portion (15) is exposed through the though-hole (14), and a lens unit (12) mounted on the other side of the substrate (11). The substrate (10) comprises a flexible wiring board (4), wherein the flexible wiring board (4) is drawn out from the camera module (2) side and provided with wiring pattern for electrical connection with said imaging element (11), and wherein the imaging element (11) is flip chip mounted on the flexible wiring board (4)

Camera module and camera system

A method for manufacturing a semiconductor device for detecting a physical amount distribution, the semiconductor device comprising unit components arrayed in a predetermined order, the unit components each including a unit signal generation portion for detecting an electromagnetic wave and outputting the corresponding unit signal. A diffraction grating is provided on the incident light side of a spectral image sensor, the diffraction grating including scatterers, slits, and scatterers disposed in that order. An electromagnetic wave is scattered by the scatterers to produce diffracted waves, and by using the fact that interference patterns between the diffracted waves change with wavelengths, signals are detected for respective wavelengths by photoelectric conversion elements in each photodiode group.

Hirofumi Sumi

Papers

Manufacture of wiring structure

Imaging element, imaging device, electronic device, and imaging method to improve speed of analog to digital conversion

Imaging element and camera system employing a high-concentration layer between a photodiode and an insulation layer, with the insulation layer being between the high-concentration layer and a well of an amplifying transistor

Camera module and camera system

Method for manufacturing information aquiring semiconductor device