An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.

Light-emitting device

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Provided is a field-effect transistor including an active layer and a gate insulating film, wherein the active layer includes an amorphous oxide layer containing an amorphous region and a crystalline region, and the crystalline region is in the vicinity of or in contact with an interface between the amorphous oxide layer and the gate insulating film

Field-effect transistor

The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 18 /cm 3 , and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6 , a drain electrode 5 , a gate electrode 4 , a gate insulating film 3 , and a channel layer 2 , an amorphous oxide having an electron carrier concentration less than 10 18 /cm 3 is used in the channel layer 2.

Amorphous oxide and thin film transistor

A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

Amorphous oxide and field effect transistor

PROBLEM TO BE SOLVED: To provide a super flat transparent conductive film which can improve the characteristics of a transparent electrode for an organic EL display, an oxide LED, and LD. SOLUTION: The super flat transparent conductive film like ITO, characterized by the average surface roughness of 1 nm or less, is formed on a super flat glass substrate or on a crystalline substrate, for example, on a YSZ single crystal substrate, and has a terrace-step structure reflecting the crystal structure of the transparent conductive film material. When the film is formed by one method of either pulse-laser evaporation method, sputtering method, CVD method, MO-CDV method, or MBE method, the substrate is kept in the temperature of 800°C-1500°C. By removing an assist of energy except heat or undesirable substance adsorbed on the surface, the temperature can be kept in 800°C or less. COPYRIGHT: (C)2002,JPO

Super flat transparent conductive film and manufacturing method of the same

PROBLEM TO BE SOLVED: To solve such inconvenience that conventional LnCuOX films have been manufactured by growing an amorphous film under appropriate conditions by a sputtering method and then annealing it at high temperatures, and have not displayed sufficiently high light-emitting efficiency and electron mobility as a luminous element and an electronic element material due to the fact that they are all polycrystalline. SOLUTION: A thin film as a base material is grown on a single crystal substrate, and an amorphous or polycrystalline LnCuOX (wherein, Ln denotes at least one kind of lanthanoids or Y; and X denotes at least one kind of S, Se or Te) thin film is deposited on it. After that, it is annealed at a high temperature of 500°C or above. A thin film with good crystallinity suitable for a single crystal for a light-emitting diode element, a semiconductor laser element, a field-effect transistor element or a heterobipolar transistor element can be grown. COPYRIGHT: (C)2004,JPO

LnCuO (S, Se, Te) MONOCRYSTALLINE THIN FILM, ITS MANUFACTURING METHOD AND OPTICAL DEVICE OR ELECTRONIC DEVICE USING THE SAME

PROBLEM TO BE SOLVED: To reduce thickness of a thin film and enhance the efficiency to attain the larger size and make into fine state of a liquid crystal display by alternately laminating a carrier generating layer and a carrier moving layer by the use of a high purity target by means of pulse laser evaporation PLD, and specifying the average roughness of each layer. SOLUTION: Atoms, molecules, or ions are accumulated on a monocrystal substrate, having a surface super-flattened in atomic order by PLD filming method using a sintered body or powder body of high purity In2O2, ZnO or the like as target and a laser beam as starting material evaporating source to alternately laminate a carrier generating layer and a carrier moving layer thereon in atomic layer development mode. At this time, vacuum level, power density of laser beam, temperature of substrate and oxygen partial pressure are properly regulated to set the film thickness to 2-30 mm, and the surface roughness in the interface between the respective layers to 10 nm or less by square average square root roughness Rms, preferably, of 3 nm or less. According to this, a superhigh conductive thin film having high crystallinity, mobility and carrier concentration can be provided so as to contribute to making higher efficiency for a solar battery. COPYRIGHT: (C)2000,JPO

Transparent conductive thin film and its manufacture

PROBLEM TO BE SOLVED: To prepare a low resistance ITO thin film having <1×10-4 Ωcm resistivity and to provide a method of its preparation, at the like. SOLUTION: The ITO film is evaporated onto a crystalline substrate (e.g. YSZ single crystal substrate) at 500 to 1,000 deg.C substrate temperature using a pulsed laser assisted vapor deposition method.

Low resistance ito thin film and its preparation

PROBLEM TO BE SOLVED: To solve a problem that an NiO thin film is an assemblage of polycrystalline bodies and has a surface having large unevenness and for example, even if a ZnO film is grown on the NiO polycrystalline thin film, the crystallinity of the ZnO is made so worse that a hetero-bonding cannot be produced. SOLUTION: The p-type oxide semiconductor NiO single crystal thin film is obtained by annealing the polycrystalline p-type oxide NiO thin film formed by a vapor growth method to form a single crystal. The single crystal thin film is constituted of a flat terrace and a sub-nanometer (nm) step in atomic level and has ≥10 -4 S/cm conductivity at a room temperature which is controllable by changing the concentration of Li contained as an acceptor in the range of ≤30at%. The temperature of the substrate is kept at ≤100°C and the polycrystalline p-type oxide NiO thin film is formed on a heat resistant single crystal substrate by the vapor growth method and annealed at 600-1,500°C to form the single crystal. COPYRIGHT: (C)2004,JPO

Hiromichi Ota

Papers

Super flat transparent conductive film and manufacturing method of the same

LnCuO (S, Se, Te) MONOCRYSTALLINE THIN FILM, ITS MANUFACTURING METHOD AND OPTICAL DEVICE OR ELECTRONIC DEVICE USING THE SAME

Transparent conductive thin film and its manufacture

Low resistance ito thin film and its preparation

SUPER-FLAT P-TYPE OXIDE SEMICONDUCTOR NiO SINGLE CRYSTAL THIN FILM