I have developed "tennis elbow" from lugging this book around the past four weeks, but it is worth the pain, the effort, and the aspirin. It is also worth the (relatively speaking) bargain price. Including appendixes, this book contains 894 pages of text. The entire panorama of the neural sciences is surveyed and examined, and it is comprehensive in its scope, from genomes to social behaviors. The editors explicitly state that the book is designed as "an introductory text for students of biology, behavior, and medicine," but it is hard to imagine any audience, interested in any fragment of neuroscience at any level of sophistication, that would not enjoy this book. The editors have done a masterful job of weaving together the biologic, the behavioral, and the clinical sciences into a single tapestry in which everyone from the molecular biologist to the practicing psychiatrist can find and appreciate his or

Principles of Neural Science

Silicon lasers have long been a goal for semiconductor scientists, and a number of important breakthroughs in the past decade have focused attention on silicon as a photonic platform. Here we review the most recent progress in this field, including low-threshold silicon Raman lasers with racetrack ring resonator cavities, the first germanium-on-silicon lasers operating at room temperature, and hybrid silicon microring and microdisk lasers. The fundamentals of carrier transition physics in crystalline silicon are discussed briefly. The basics of several important approaches for creating lasers on silicon are explained, and the challenges and opportunities associated with these approaches are discussed. Silicon lasers have long been a goal for semiconductor scientists. This Progress Article reviews the most recent developments in this field, including silicon Raman lasers, the first germanium-on-silicon lasers operating at room temperature, and hybrid silicon microring and microdisk lasers. Challenges and opportunities for the present approaches are also discussed.

/pdf/recent-progress-in-lasers-on-silicon-3w64r65a91.pdf

Recent progress in lasers on silicon

The fabrication of transistors using vertical, six-sided core–multishell indium gallium arsenide nanowires with an all-surrounding gate on a silicon substrate combines the advantages of a three-dimensional gate architecture with the high electron mobility of the III–V nanowires, drastically enhancing the on-state current and transconductance. In the continuing drive to improve and miniaturize transistors, the microelectronics industry has recently adopted three-dimensional electronic gate structures. Another way of improving transistors is to use semiconductor materials with higher electron mobility than silicon, although this presents significant fabrication challenges. Katsuhiro Tomioka et al. combine the two approaches; they grow, with high precision, vertical, six-sided core–multishell indium gallium arsenide nanowires with an all-surrounding gate on a silicon substrate. The resulting devices demonstrate superior transistor performance with excellent on/off switching behaviour and fast operation. Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years’ time1,2,3,4. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III–V materials, specifically InGaAs, are being explored as alternative fast channels on silicon5,6,7,8,9 because of their high electron mobility and high-quality interface with gate dielectrics10. The idea of surrounding-gate transistors11, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated12,13 because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core–multishell nanowires as channels. Surrounding-gate transistors using core–multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

A III–V nanowire channel on silicon for high-performance vertical transistors

In spite of its excellent electronic properties, the use of graphene in field-effect transistors is not practical at room temperature without modification of its intrinsically semimetallic nature to introduce a bandgap. Quantum confinement effects can create a bandgap in graphene nanoribbons, but existing nanoribbon fabrication methods are slow and often produce disordered edges that compromise electronic properties. Here, we demonstrate the self-organized growth of graphene nanoribbons on a templated silicon carbide substrate prepared using scalable photolithography and microelectronics processing. Direct nanoribbon growth avoids the need for damaging post-processing. Raman spectroscopy, high-resolution transmission electron microscopy and electrostatic force microscopy confirm that nanoribbons as narrow as 40 nm can be grown at specified positions on the substrate. Our prototype graphene devices exhibit quantum confinement at low temperatures (4 K), and an on-off ratio of 10 and carrier mobilities up to 2,700 cm(2) V(-1) s(-1) at room temperature. We demonstrate the scalability of this approach by fabricating 10,000 top-gated graphene transistors on a 0.24-cm(2) SiC chip, which is the largest density of graphene devices reported to date.

Scalable templated growth of graphene nanoribbons on SiC

The Self-Organizing Map (SOM) algorithm has attracted a great deal of interest among researches and practitioners in a wide variety of fields. The SOM has been analyzed extensively, a number of variants have been developed and, perhaps most notably, it has been applied extensively within fields ranging from engineering sciences to medicine, biology, and economics. We have collected a comprehensive list of 5384 scientific papers that use the algorithms, have benefited from them, or contain analyses of them. The list is intended to serve as a source for literature surveys. The present addendum contains 2092 new articles, mainly from the years 1998-2002. We have provided a keyword index to help finding articles of interest, and additionally a modern automatically constructed variant of a thematic index: a WEBSOM interface to the whole article collection of years 1981-2000. The SOM of SOMs is available at http://websom.hut.fi/websom/somref/search.cgi for browsing and searching the collection.

Bibliography of Self-Organizing Map SOM) Papers: 1998-2001 Addendum

A stripe laser structure called a planar stripe was developed. The edge blurring of the current path is improved by the fact that the current spreads only in the thin p-AlxGa1-xAs layer with relatively high resistance. The planar stripe laser has a small threshold current resulting from the small current spreading effect and a good thermal contact. It also shows finely controlled transverse modes, compared with a usual contact stripe laser, and relatively high external differential quantum efficiency. The threshold current density is comparable to that of the proton bombarded stripe laser. The transverse mode shows an approximate Hermite-Gaussian distribution.

https://iopscience.iop.org/article/10.1143/JJAP.12.1585/pdf

A GaAs-AlxGa1-xAs Double Heterostructure Planar Stripe Laser

Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(100) substrates

A device for coupling a laser beam to an end surface of an optical fiber comprises a beam converging lens, a holder for the fiber, a block of a solid material, and a mass of a binder between the block and the end surface and between the block and the holder. The lens and the holder are fixed to each other so as to make the laser beam focus on the end surface. Use is preferred of an arrangement comprising a first and a second holder in which the holders have axial lines, respectively, and hold a laser element for the laser beam and the lens with a beam axis of the laser beam and an optical axis of the lens rendered coincident with the respective axial lines and in which the holders are fixed to each other with the axial lines aligned. The arrangement is effective also in coupling the laser beam to a general transmission medium. Instead of using the arrangement, a lens holder may be fixed to the fiber holder and then to a laser element holder so as to make the laser beam focus on the optical fiber end surface. A nonreflecting coating is desirable on the block at a portion exposed to the incident laser beam either when the laser beam is incident onto the block with a small angle of convergence or when the block is thin. The solid material, the binder, and the optical fiber usually have an approximately equal refractive index.

Device for excellently coupling a laser beam to a transmission medium through a lens

We proposed a Si/III–V–N compound semiconductors/Si structure, which is applicable to optoelectronic integrated circuits (OEICs). The feature of this structure is that optoelectronic devices and Si electronic devices could be fabricated by low-temperature planar process at the same time. A dislocation-free and lattice-matched Si/GaP1−xNx/Si (x=2.9%) structure, which is a basic structure for OEICs, was grown by molecular-beam epitaxy. The images of transmission electron microscopy revealed that there were no threading dislocations and misfit dislocations in the epitaxial layers. It was clarified that the Si and GaP1−xNx layers were lattice-matched to Si and had structural high crystalline quality comparable to Si substrates.

Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems

This paper reports new observations in degraded (Al · Ga)As double‐heterostructure (DH) laser diodes and proposes a mechanism of short‐term ([inverted lazy s] 100 h) degradation characteristic to DH structures. Degradation is seen localized as ``dark lines'' of certain crystalline orientations in electroluminescent patterns, as well as junction current patterns using an SEM. X‐ray measurement showed internal strain due to heteromismatch. It is suggested that the internal stress accelerates development of the dark lines, which is likely to be a crystalline defect caused by thermal stresses.

Hiroo Yonezu

Papers

A GaAs-AlxGa1-xAs Double Heterostructure Planar Stripe Laser

Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(100) substrates

Device for excellently coupling a laser beam to a transmission medium through a lens

Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems

Degradation mechanism of (Al · Ga)As double‐heterostructure laser diodes