Chemical vapour deposition of superconducting Nb3Ge controlled by diffusion in the gas phase

Nb‐Ge films, which have been prepared by chemical vapor deposition, have been studied for superconducting transition temperatures, crystal structures, and growth morphology. In the films a relationship was obtained among positions at which the highest Tc films are deposited, the degree of orientation for A15 crystallites is lowered, and the microstructures for film surface change has been found. This can be explained in terms of a higher deposition rate of Ge than that of Nb.

Hiroshi Onodera

Papers

Influences of gas flow on chemical vapor deposition of superconducting Nb‐Ge films