An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A method of forming a crystalline semiconductor thin film on a base material which can be prepared at a low temperature by simple step and device, the method including a processing step of applying UV-rays to an amorphous semiconductor thin film provided on a base material while keeping a temperature at not less than 25° C. and not more than 300° C. in a vacuum or a reducing gas atmosphere, as well as a substrate having the semiconductor thin film provided on the base material, a substrate for forming a color filter and a color filter using the substrate.

Method of forming crystalline semiconductor thin film on base substrate, lamination formed with crystalline semiconductor thin film and color filter

An organic light-emitting display includes a first substrate which includes a pixel region, and an encapsulation region which surrounds the pixel region, an organic light-emitting device which is located in the pixel region, a sealant which is located in the encapsulation region, and a dummy metal which is interposed between the first substrate and the sealant, where the encapsulation region includes a first encapsulation region and a second encapsulation region which is adjacent to the first encapsulation region, and the dummy metal is located in the first encapsulation region.

Organic light emitting display

An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a stretchable substrate, a thin film transistor (TFT) formed over the stretchable substrate and including a plurality of electrodes, an OLED electrically connected to the TFT and including a plurality of electrodes, and a plurality of interconnection lines connected to the electrodes of the OLED and the TFT. At least one of the interconnection lines is configured to move in a stretching direction and rotate an electrode selected from the electrodes of the OLED and the TFT connected to the at least one interconnection line.

Organic light-emitting diode display

An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.

Semiconductor Device and Method of Fabricating the Same

A method for forming a polycrystalline semiconductor thin film according to the present invention includes the steps of: forming a semiconductor thin film partially containing microcrystals serving as crystal nuclei for polycrystallization on an insulating substrate; and polycrystallizing the semiconductor thin film by laser annealing.

Method for forming polycrystalline thin film and method for fabricating thin-film transistor

A semiconductor device having a high field effect mobility is produced by increasing the particle diameter of a silicon thin film of a polycrystalline silicon thin film transistor. On a transparent insulating substrate (201) is formed an insulating film of a two-layer structure comprising a lower insulating film (202) contacting with the transparent insulating substrate (201) and having a heat conductivity larger than that of an upper insulating film (203) that is formed thereon. The upper insulating film (203) is patterned into a plurality of stripes. Then, an amorphous silicon thin film (204) is formed on the patterned insulating film. Thereafter, the amorphous silicon thin film (204) is transformed into a polycrystalline silicon thin film (210) by scanning the amorphous silicon thin film (204) with a laser beam in parallel with the stripes of the upper insulating film (203).

Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same

A method for fabricating an active matrix substrate for forming constituent elements such as a semiconductor layer, a passivation layer, an electrode material and other elements, uses a photoresist exposed from the reverse side of the substrate, using the gate electrode pattern made of opaque material on a transparent substrate as the mask. This method contributes to lowering the cost and improving the performance of semiconductor devices.

Method for fabricating active substrate

In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203. is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.

Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same

PROBLEM TO BE SOLVED: To obtain a semiconductor element having high field-effect mobility and the like by enlarging the particle diameter of the silicon thin film of a polycrystalline silicon thin film. SOLUTION: After a double-layer structured insulating film comprising the material, wherein the heat conductivity of a lower insulating film 202 is contact with a transparent insulating substrate 201 is larger than the heat conductivity of an upper insulating film 203 formed on the film 202, is formed, the upper insulating film 203 is formed into the pattern in a plurality of stripes. Thereafter, a noncrystalline silicon film 204 is formed on the patterned insulating film. Furthermore, laser light is scanned and applied in parallel on the strip pattern of the upper insulating film 203. Thus, the noncrystalline silicon thin film 204 is made a polycrystalline silicon thin film 210.

Hiroshi Tsutsu

Papers

Method for forming polycrystalline thin film and method for fabricating thin-film transistor

Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same

Method for fabricating active substrate

Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same

Semiconductor thin film, manufacture thereof and manufacturing device, and semiconductor element and manufacture thereof