M
Mamoru Furuta
Researcher at Kochi University of Technology
Publications - 187
Citations - 5090
Mamoru Furuta is an academic researcher from Kochi University of Technology. The author has contributed to research in topics: Thin-film transistor & Thin film. The author has an hindex of 26, co-authored 176 publications receiving 4639 citations. Previous affiliations of Mamoru Furuta include Kōchi University & Panasonic.
Papers
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Journal ArticleDOI
Novel top‐gate zinc oxide thin‐film transistors (ZnO TFTs) for AMLCDs
Takashi Hirao,Mamoru Furuta,Hiroshi Furuta,Tokiyoshi Matsuda,Takahiro Hiramatsu,Hitoshi Hokari,Motohiko Yoshida,Hiromitsu Ishii,Masayuki Kakegawa +8 more
TL;DR: In this paper, a top-gate thin-film transistors (TFTs) with a transparent zinc oxide (ZnO) channel have been developed, where ZnO thin films used as active channels were deposited by rf magnetron sputtering.
Patent
Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
TL;DR: A semiconductor device includes an oxide semiconductor thin film layer primarily including zinc oxide having at least one orientation other than (002) orientation as discussed by the authors, and the zinc oxide may have a mixed orientation including (100) and (101) orientation.
Journal ArticleDOI
Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs
Takashi Hirao,Mamoru Furuta,Takahiro Hiramatsu,Tokiyoshi Matsuda,Chaoyang Li,Hiroshi Furuta,Hitoshi Hokari,M. Yoshida,H. Ishii,Masayuki Kakegawa +9 more
TL;DR: In this article, a bottom-gate thin-film transistors (TFTs) with transparent zinc oxide (ZnO) channels have been developed for liquid-crystal display (LCD) with the required pattern accuracy.
Patent
Method for forming polycrystalline thin film and method for fabricating thin-film transistor
TL;DR: In this paper, a method for forming a polycrystalline semiconductor thin film according to the present invention includes the steps of: forming a semiconductor sheet partially containing microcrystals serving as crystal nuclei for poly-crystallization on an insulating substrate; and polycrystalizing the semiconductor layer by laser annealing.
Journal ArticleDOI
Successful Growth of Conductive Highly Crystalline Sn-Doped ?-Ga2O3 Thin Films by Fine-Channel Mist Chemical Vapor Deposition
TL;DR: In this article, a fine-channel mist chemical vapor deposition on c-sapphire substrates at 400 °C at a deposition rate of more than 20 nm/min was used to grow conductive α-phase gallium oxide (Ga2O3) thin films.