Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

Disclosed are a liquid crystal display device which reduces the number of masks and improves an aperture ratio, and a method for fabricating the same. The liquid crystal display device includes gate and data lines perpendicularly intersecting on a substrate having pixel and pad parts; a thin film transistor on the substrate at the intersection of the gate and data lines; a pixel electrode on the substrate at the pixel part and connected directly to a drain electrode of the thin film transistor; an insulating film on the overall surface of the substrate including the pixel electrode and the thin film transistor; an organic film on the insulating film over the thin film transistor and the data line; and a common electrode of slit shapes overlapping the pixel electrode such that the insulating film is interposed between the common electrode and the pixel electrode.

Liquid crystal display device and method for fabricating the same

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

Disclosed are an LCD device and a method of manufacturing the same, in which a passivation layer and a pixel electrode are simultaneously formed by a single mask process using a half tone mask, and thus, manufacturing efficiency increases, and a defective contact due to loss of the pixel electrode can be prevented in a pad area. The LCD device includes a pad part including a pad area and a contact area. The LCD device includes a pixel pad formed in the pad area, a pixel bar formed in the contact area, and a bridge layer contacting the pixel pad with the pixel bar. The bridge layer is formed as a single layer or multi layers, and formed of one or more of a transparent conductive material and an opaque conductive material.

Liquid crystal display device and method for manufacturing the same

The present invention provides OLEDs of the top emission type comprising organic light-emitting (LE) elements by preventing the problems such as the widening of the power lines, the reduction in the aperture ratio caused by the widening of the upper and the lower capacitor electrodes and the short circuit between the upper and the lower electrodes caused by the roughness of the flattening layers. Two kinds of the OLEDs are provided. One is an OLED comprising a region of LE layer sandwiched between the upper and lower electrodes is formed on a power line of TFT for driving the pixel. Another comprises a region of the LE layer formed on an electrode of capacitor connected to the TFTs to control the light-emitting element. Accordingly, without forming a flattening layer on the light-emitting layer, there is no electric short circuit between the lower electrode and the upper electrode.

Organic Light Emitting Display Device

Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.

Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glan

A shift register unit has stages In each stage, a clamping transistor and the control electrode of an output transistor are connected to the output electrode of an input transistor to which an output one stage behind is input A pull-down resistor is connected to the output electrode of the output transistor A capacitor is inserted between the control electrode and output electrode of the output transistor A clock signal is input to the output transistor, and a signal obtained by inverting a clock signal two stages forward is input to the clamping transistor

Shift register unit and display device

A liquid crystal display having a plurality of source lines which are each divided into two groups includes a first source driver for applying image signals to a first group of the divided source lines, a second source driver for applying image signals to a second group, a first gate driver operative to apply scanning signals to one segment of a plurality of gate lines that extends across the first group of the divided source lines, and a second gate driver for applying scanning signals to the other segment of a plurality of gate lines that extends across the second group of the divided source lines. The liquid crystal display further includes 3:1 demultiplexers to switch and allocate an image signal from each of the first and second source drivers to three source lines.

Active-matrix liquid crystal display suitable for high-definition display, and driving method thereof

A method for producing an electo-optical device including only five photolithographic steps, including a first photolithographic step for forming a gate electrode and gate wiring, a second photolithographic step for forming a semiconductor portion above the gate electrode, a third photolithographic step for forming a contact hole through the first insulator film to the gate wiring, a fourth photolithographic step for forming a source electrode, a source wiring and a drain electrode and then forming a channel portion above the gate electrode exposing said semiconductor active film and forming a transparent pixel electrode, and a fifth photolithographic step for forming a light-permeable opening above the transparent pixel electrode, and a contact hole for source wiring and gate wiring connection terminals.

Method of producing an electro-optical device

PROBLEM TO BE SOLVED: To provide a liquid crystal display device capable of enhancing an opening ratio while keeping to have a high visual field angle characteristic being in the constitution of driving a liquid crystal with traverse electric fields SOLUTION: In this display, liquid crystal is provided between one pair of substrates, plural gate wirings 50 and plural source wirings 51 are provided by being orhthogonally crossed each other on the counter surface of the substrate of one side, thin film transistors T are provided in the vicinities of the respective intersections of the gate wirings 50 and the source wirings 51, pixel electrodes 54 which are driven by the thin film transistors T and common electrodes 53 which impress traverse electric fields on the liquid crystal in the direction along the substrate by coacting with each of the pixel electrodes 54 to form the plural pixel electrodes are provided, also the common electrode 53 are provided through the gate wirings 50 and insulating isolation layers 56, 57 and electrode parts being along the gate wirings 50 among the common electrodes 53 are provided in the vicinities of the gate wirings 50

Hiroyuki Hebiguchi

Papers

Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glan

Shift register unit and display device

Active-matrix liquid crystal display suitable for high-definition display, and driving method thereof

Method of producing an electro-optical device

Active matrix type liquid crystal display device