An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A new low temperature crystallization method for poly-Si TFTs was developed: Metal-Induced Lateral Crystallization (MILC). The a-Si film in the channel area of a TFT was laterally crystallized from the source/drain area, on which an ultrathin nickel layer was deposited before annealing. The a-channel poly-Si TFTs fabricated at 500/spl deg/C by MILC showed a mobility of 121 cm/sup 2//V/spl middot/s, a threshold voltage of 1.2 V, and an on/off current ratio of higher than 10/sup 6/. These electrical properties are much better than TFTs fabricated by conventional crystallization at 600/spl deg/C.

Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization

A surgical instrument operable to sever tissue includes a body assembly and a selectively coupleable end effector assembly. The end effector assembly may include a transmission assembly and an end effector. The body assembly includes a trigger and a casing configured to couple with the transmission assembly. An information transmission system transmits instrument information received from a sensor, for example, to a secure server via a secure gateway connected to the instrument. The instrument may be previously tested on a calibration kit to pre-determine and load surgeon-specific settings onto the instrument prior to use.

Surgical instrument usage data management

An electro-optical device having a plurality of pixels including a plurality of EL elements, wherein the electro-optical device provides a gray scale display by controlling a period of time at which the plurality of the EL elements emit light in one frame period; the plurality of the EL elements have a first electrode and a second electrode; the first electrode is held at a constant potential; and a potential of the second electrode changes in such a manner that a polarity of an EL driving voltage, which is a difference between the potentials applied to the first and second electrodes, is inverted for each one frame period.

Electro-optical device

A light-emitting element of the present invention can have sufficiently high emission efficiency with a structure including a host material being able to remain chemically stable even if a phosphorescent compound having higher emission energy is used as a guest material. The relation between the relative emission intensity and the emission time of light emission obtained from the host material and the guest material contained in a light-emitting layer is represented by a multicomponent decay curve. The relative emission intensity of the slowest component of the multicomponent decay curve becomes 1/100 for a short time within a range where the slowest component is not interfered with by quenching of the host material (the emission time of the slowest component is preferably less than or equal to 15 μsec); thus, sufficiently high emission efficiency can be obtained.

Light emitting element, light emitting device, electronic device, and lighting device

By both numerical simulation and experimental investigation, we found it possible to enlarge the grain size (?3000 ?) of polycrystalline silicon (poly-Si) films by excimer laser annealing, using a new method to control the solidification process of molten Si - low-temperature (?400?C) substrate heating during laser annealing. Poly-Si thin-film transistors (TFTs) fabricated by this new excimer laser annealing method showed a high field-effect mobility of 230 cm2/V?s, and good uniformity of field-effect mobility (?10%) within the effective laser irradiation area.

https://iopscience.iop.org/article/10.1143/JJAP.30.3700/pdf

Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin Film Transistor

Lateral grain growth in nondoped poly-Si films was studied by using Si thin films (500 A) with different structures as a starting material for excimer laser crystallization. It was clarified that the lateral grain growth phenomenon (micron-size grains with strong (111) orientation) upon excimer laser annealing was strongly affected by both the microstructure and the orientation of the initial Si thin films. This result supports our previous speculation that the principal driving force of the lateral grain growth phenomenon is surface energy anisotropy. Poly-Si thin-film transistors using these films show a high field effect mobility of 440 cm2/Vs, achieved through a low-temperature process below 600° C. This excellent electrical characteristic is thought to be due to the large grain size of poly-Si thin film with controlled orientation, good crystallinity, and a smooth surface.

https://iopscience.iop.org/article/10.1143/JJAP.33.5657/pdf

Comprehensive Study of Lateral Grain Growth in Poly-Si Films by Excimer Laser Annealing and Its Application to Thin Film Transistors

Dramatic lateral grain growth of nondoped poly-Si films (maximum grain size: ~4.5 µm, film thickness: 500 A) with strong crystallographic (111) orientation on glass substrates has been achieved using an excimer laser annealing method, namely at low temperature below 400°C and in a processing time shorter than a second, for the first time. The surface morphology of these poly-Si films was very smooth and the crystallinity was excellent with minimal internal defects. These poly-Si films have monomodally distributed grain sizes, with an average grain size of around 1.5 µm. As a result of experimental study, we speculate that the basic driving force behind this lateral grain growth was surface free energy anisotropy, as the same mechanism was observed in high-temperature furnace annealing of doped poly-Si thin films.

Lateral Grain Growth of Poly-Si Films with a Specific Orientation by an Excimer Laser Annealing Method

An electronic cooling apparatus has a cabinet (11) which is opened at the front and rear sides thereof and accommodates plural electronic devices (3) each having a fan (4), and a rear door (12) which is provided with an evaporator. Air blown by the fan is cooled by the evaporator and then returned to a room. An expansion valve and an electronic component unit for controlling the expansion valve are provided integrally with the evaporator. A drain pan for receiving drain water dropping from the evaporator is provided at the lower side of the evaporator. Furthermore, an exhaust temperature detecting unit for detecting exhaust heat temperature of the electronic device and a controller for controlling the refrigerant supply to the evaporator are provided. When the exhaust heat temperature is equal to or less than a set exhaust temperature which is defined in a computer room so that no dew condensation occurs in the evaporator, the controller stops the refrigerant supply to the evaporator, and when the exhaust heat temperature exceeds the set exhaust heat temperature, the controller starts the refrigerant supply to the evaporator.

Electronic device cooling system and electronic device cooling apparatus

A high-mobility (280 cm/sup 2//V-s), high-throughput poly-Si TFT (thin-film transistor) formed using a low-temperature process ( >

Hiroyuki Kuriyama

Papers

Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin Film Transistor

Comprehensive Study of Lateral Grain Growth in Poly-Si Films by Excimer Laser Annealing and Its Application to Thin Film Transistors

Lateral Grain Growth of Poly-Si Films with a Specific Orientation by an Excimer Laser Annealing Method

Electronic device cooling system and electronic device cooling apparatus

High mobility poly-Si TFT by a new excimer laser annealing method for large area electronics