T
Takashi Kuwahara
Researcher at Sanyo
Publications - 21
Citations - 581
Takashi Kuwahara is an academic researcher from Sanyo. The author has contributed to research in topics: Grain size & Laser. The author has an hindex of 9, co-authored 19 publications receiving 576 citations.
Papers
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Journal ArticleDOI
Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin Film Transistor
Hiroyuki Kuriyama,Seiichi Kiyama,Noguchi Shigeru,Takashi Kuwahara,Ishida Satoshi,Tomoyuki Nohda,Sano Keiichi,Hiroshi Iwata,Hiroshi Kawata,Masato Osumi,Shinya Tsuda,Shoichi Nakano,Yukinori Kuwano +12 more
TL;DR: In this article, an excimer laser annealing method was used to enlarge the grain size of polycrystalline silicon (poly-Si) films by using a new method to control the solidification process of molten Si -low-temperature (?400?C) substrate heating during laser-annealing.
Journal ArticleDOI
Comprehensive Study of Lateral Grain Growth in Poly-Si Films by Excimer Laser Annealing and Its Application to Thin Film Transistors
Hiroyuki Kuriyama,Tomoyuki Nohda,Yoichirou Aya,Takashi Kuwahara,Kenichiro Wakisaka,Seiichi Kiyama,Shinya Tsuda +6 more
TL;DR: In this paper, the lateral grain growth in non-oped poly-Si films was studied by using Si thin films (500 A) with different structures as a starting material for excimer laser crystallization.
Journal ArticleDOI
Lateral Grain Growth of Poly-Si Films with a Specific Orientation by an Excimer Laser Annealing Method
Hiroyuki Kuriyama,Tomoyuki Nohda,Ishida Satoshi,Takashi Kuwahara,Noguchi Shigeru,Seiichi Kiyama,Shinya Tsuda,Shoichi Nakano +7 more
TL;DR: In this paper, the authors used an excimer laser annealing method for the first time to achieve lateral grain growth of non-doped poly-Si films at low temperature below 400°C and in a processing time shorter than a second.
Proceedings ArticleDOI
High mobility poly-Si TFT by a new excimer laser annealing method for large area electronics
Hiroyuki Kuriyama,Seiichi Kiyama,Noguchi Shigeru,Takashi Kuwahara,Ishida Satoshi,Tomoyuki Nohda,Sano Keiichi,Hiroshi Iwata,Shinya Tsuda,Shoichi Nakano +9 more
TL;DR: In this paper, a poly-Si TFT (thin-film transistor) was constructed using a low-temperature process using a high-mobility (280 cm/sup 2/V-s) and high-throughput polySi transistor.
Journal ArticleDOI
Improving the uniformity of poly-si films using a new excimer laser annealing method for giant-microelectronics
Hiroyuki Kuriyama,Takashi Kuwahara,Ishida Satoshi,Tomoyuki Nohda,Sano Keiichi,Hiroshi Iwata,Noguchi Shigeru,Seiichi Kiyama,Shinya Tsuda,Shoichi Nakano,Masato Osumi,Yukinori Kuwano +11 more
TL;DR: In this paper, a new excimer laser annealing method was proposed, in which the solidification process of molten Si is controlled by low-temperature (400°C) substrate heating during excimer-laser laser-recrystallized poly-Si films.