An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The fabrication of silicon heterojunction bipolar transistors which have a record unity-current-gain cutoff frequency (f/sub T/) of 75 GHz for a collector-base bias of 1 V, an intrinsic base sheet resistance (R/sub bi/) of 17 k Omega / Square Operator , and an emitter width of 0.9 mu m is discussed. This performance level, which represents an increase by almost a factor of 2 in the speed of a Si bipolar transistor, was achieved in a poly-emitter bipolar process by using SiGe for the base material. The germanium was graded in the 45-nm base to create a drift field of approximately 20 kV/cm, resulting in an intrinsic transit time of only 1.9 ps. >

75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

Ionizing radiation induced gain degradation in microcircuit bipolar polysilicon and crystalline emitter transistors is investigated. In this work, /sup 60/Co irradiation testing was performed on bipolar test structures. The effects of collector bias, dose rate, and anneal temperature are discussed. Major differences in the radiation response of polysilicon emitter transistors are demonstrated as a function of dose rate. The worst-case gain degradation occurs at the lowest dose rate complicating hardness assurance testing procedures. The dose rate and anneal data suggest that MIL-STD-883B Test Method 1019.4 is non-conservative for polysilicon emitter transistors, which show enhanced radiation hardness over the crystalline emitter transistors. >

Response of advanced bipolar processes to ionizing radiation

An analysis of regenerative dividers predicts the required phase shift or selectivity for proper operation. A divider topology is introduced that employs resonance techniques by means of on-chip spiral inductors to tune out the device capacitances. Configured as two cascaded /spl divide/2 stages, the circuit achieves a frequency range of 2.3 GHz at 40 GHz while consuming 31 mW from a 2.5-V supply.

https://www.vlsisymposium.org/Past/03web/circuits/cir_pdf/C20p1.pdf

A 40-GHz frequency divider in 0.18-/spl mu/m CMOS technology

To selectively grow a P type silicon layer and a Si/GexSi1-x superlattice layer (7) under low temperature conditions in the area encircled with a groove (4), at least the side walls of which consist of silicon oxide film, which is formed in the silicon substrate. Thereby, the leak at the side of the superlattice layer can be reduced. Furthermore, by burying a metal film in the groove, the loss of light at the side of the superlattice layer (7) can be suppressed to the minimum. Thus a light receiver having silicon/germanium.silicon-mixed-crystal layer is stably formed in a silicon semiconductor substrate and optical absorption efficiency can be improved.

Method of manufacturing semiconductor device

A semiconductor device comprising an insulating isolation groove which comprises a groove in a substrate, an insulating film on the inner surface of the groove, a polycrystal silicon film and a boron phosphosilicate glass film in order embedded within the groove, and a silicon oxide film on the boron phosphosilicate glass film. Since the polycrystal silicon film and boron phosphosilicate glass film are embedded within the groove, the crystal defect due to thermal expansion does not occur. And, since it is not necessary to oxidize the surface of the polycrystal silicon film within the groove, deformation due to an increased build-up at the time of oxidation does not occur.

Semiconductor device with insulating isolation groove

The present invention provides an emitter structure of a field emission electron gun. The emitter structure comprises an emitter being electrically conductive and being pointed at the top, wherein the top of the emitter has the highest resistance of every other part, so that the top of the emitter has the highest heat energy of every other part when the emitter emits electrons.

Field emission electron gun and method for fabricating the same

An X-band miniaturized traveling-wave tube (TWT) using a Spindt field emitter array (FEA) cathode was built. The FEA cathode has 542,000 molybdenum tips in an emission area 1.2 mm in diameter. It also has a trench current-limiter that shows low resistance in normal operation. A saturation output power of 28.2 W, a saturation power gain of 40 dB, and a beam transmission ratio of more than 99.3% have been achieved at a frequency of 11.5 GHz under 3% duty ratio.

Design and performance of traveling-wave tubes using field emitter array cathodes

A novel method of preparing high-performance self-aligned silicon bipolar transistors having a Si MBE (molecular beam epitaxy) base layer, called SSSB (super self-aligned selectively grown base) technology, has been developed. An SSSB technology features the simultaneous formation of a facet-free, ultrathin selective silicon epitaxial layer, and a selectively deposited graft base polysilicon film. Under an optimized gas-source MBE process condition, uniform epitaxial growth onto the

Hisashi Takemura

Papers

Method of manufacturing semiconductor device

Semiconductor device with insulating isolation groove

Field emission electron gun and method for fabricating the same

Design and performance of traveling-wave tubes using field emitter array cathodes

A 'self-aligned' selective MBE technology for high-performance bipolar transistors