A sputtering target including an oxide sintered body, the oxide sintered body containing indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and the oxide sintered body substantially being of a bixbyite structure.

Sputtering target, oxide semiconductor film and semiconductor device

A dielectric ceramic composition, comprising a main component including barium titanate, a fourth subcomponent including an oxide of R1 (note that R1 is at least one kind selected from a first element group composed of rare-earth elements having a effective ionic radius of less than 108 pm when having a coordination number of nine), and a fifth subcomponent including an oxide of R2 (note that R2 is at least one kind selected from a second element group composed of rare-earth elements having a effective ionic radius of 108 pm to 113 pm when having a coordination number of nine) According to the composition, a dielectric ceramic composition having excellent reducing resisting property at firing, excellent temperature dependence of capacitance after firing, and improved accelerated lifetime of insulation resistance can be provided

Dielectric ceramic composition and electronic device

Non-linear voltage-dependent resistor having a ceramic sintered body based on zinc oxide as a resistance material which is doped with at least one alkaline earth metal, rare earth metal and metal of the iron group present as an oxide and is doped with at least one of the metals from the group aluminum, gallium and/or indium and having electrodes provided on oppositely located major surfaces of the sintered body, in which the sintered body is constructed from several layers having at least a layer structure of one layer of resistance material on a carrier layer based on zinc oxide which has a higher electric conductivity as compared with the resistance material, as well as a method of manufacturing same.

Non-linear voltage-dependent resistor

A panel heater comprising, on an upper surface of a metallic sheet (2) provided with PTC ceramics (1) on the back side thereof, a highly insulating material or an open space (4) at the portion corresponding to the back side portion to which the PTC ceramics are provided, with a material (3) for conducting heat from the metallic sheet being thus provided to the rest of the surface side of said metallic sheet, and a finishing sheet (5) being established on the upper surface of the whole structure. More preferably, the metallic sheet (2) is provided with equally spaced concave grooves with PTC ceramics (1) on the back plane of said grooves and a highly insulating material or an open space (4) inside said grooves, and a finishing sheet (5) established thereon. Accordingly, a simply structured panel heater resistant to heavy loads yet free from local overheating is provided.

PTC panel heater with small rush current characteristic and highly heat insulating region corresponding to heater location to prevent local overheating

A sintered nonlinear resistor body, useful in gapless lightning arresters comprises a major amount of ZnO and additional metal oxides including at least Al 2 O 3 and an amount of boron oxide of from about 0.005 mole % to about 0.6 mole %, in combination with a total amount of at least one selected alkali metal oxide of from about 0.005 mole % to about 0.3 mole %.

Voltage stable nonlinear resistor containing minor amounts of aluminum, boron and selected alkali metal additives

A non-linear resistor comprises a sintered body of a ceramic composition which comprises 99.93 to 50 mole % of zinc oxide as ZnO; 0.01 to 10 mole % of a specific rare earth oxide as R2 O3 (R represents lanthanum, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium or lutetium) 0.01 to 10 mole % of an alkaline earth oxide as MO (M represents calcium, strontium or barium) and 0.05 to 30 mole % of cobalt oxide as CoO.

Non-linear resistor

Semiconducting ceramics are produced by firing a semiconducting composition of the barium titanate type containing vanadium oxide in the amount of 0.001 to 0.5 wt%. A change in the specific resistance over the range of the temperature at which the positive temperature coefficient characteristic of resistivity (PTCR) is exhibited can be increased by as much as 105 times and the specific resistance value at room temperature can be controlled at a desired value. By further adding silicon dioxide to the above composition in the amount of 0.05 to 1.5 wt% the above effects can be enhanced, especially the specific resistance at ambient temperature.

Semiconducting ceramics containing vanadium oxide

Semi-conductor ceramic compsns. of Ba titanate series, useful as a electronic components, e.g. thermistors, and activated by addn. of >=1 rare earth, Sb, Bi, Nb or Ta, are admixed with 0.001-0.5 wt. % V before firing. Positive temp. resistivity coefficient can be raised 105 times and specific resistance at room temp. can easily be adjusted to any desired value. Further addn. of 0.05-1.5 wt. % SiO2 lowers temp. at which Ba titanate compsn. is made semi-conductive and also suppresses quick changes in specific resistance of semi-conductor at room temp.

Hisayoshi Ueoka

Papers

Non-linear resistor

Semiconducting ceramics containing vanadium oxide

Barium titanate series semi-conductors - admixed with vanadium and opt silicon dioxide to raise positive temp resistivity coefficient

Nicht-linearer widerstand