A sputtering target including an oxide sintered body, the oxide sintered body containing indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and the oxide sintered body substantially being of a bixbyite structure.

Sputtering target, oxide semiconductor film and semiconductor device

Non-linear voltage-dependent resistor having a ceramic sintered body based on zinc oxide as a resistance material which is doped with at least one alkaline earth metal, rare earth metal and metal of the iron group present as an oxide and is doped with at least one of the metals from the group aluminum, gallium and/or indium and having electrodes provided on oppositely located major surfaces of the sintered body, in which the sintered body is constructed from several layers having at least a layer structure of one layer of resistance material on a carrier layer based on zinc oxide which has a higher electric conductivity as compared with the resistance material, as well as a method of manufacturing same.

Non-linear voltage-dependent resistor

A sintered nonlinear resistor body, useful in gapless lightning arresters comprises a major amount of ZnO and additional metal oxides including at least Al 2 O 3 and an amount of boron oxide of from about 0.005 mole % to about 0.6 mole %, in combination with a total amount of at least one selected alkali metal oxide of from about 0.005 mole % to about 0.3 mole %.

Voltage stable nonlinear resistor containing minor amounts of aluminum, boron and selected alkali metal additives

Ceramic materials suitable for use in varistors, consisting essentially of a major proportion of SrTiO3, the balance being (1) at least one of Nb2O5, Ta2O5, WO3, La2O3 CeO2, Nd2O3, Y2O3, Sm2O3 Pr6O11, Eu2O3, and Dy2O3, for making the materials semiconductive, and (2) Na2O, for making surge-proof the varistors made from the ceramic materials. As desired, the compositions may further include one or more of Ag2O, CuO, MnO2, and SiO2 for a higher nonlinearity coefficient. Containing Na2O in proportions ranging from approximately 0.02 to 2.50 mole parts, the ceramic compositions make possible the provision of varistors suffering little from current or voltage surges in use.

Ceramic materials with a voltage-dependent nonlinear resistance

A glass-free thick film varistor operable at operating voltages ranging from about 30 to 200 volts per mm of active varistor material is produced by providing a screen-printable paste comprised of a non-glass containing substantially homogeneous mixture of granular varistor materials which have ZnO as the main component thereof and an organic binder, applying such paste in a desired pattern onto an insulating substrate and sintering such applied paste at relatively high temperatures so as to convert the paste into thick film varistors.

Thick film varistor and method of producing same

A non-linear resistor comprises a sintered body of a ceramic composition which comprises 99.93 to 50 mole % of zinc oxide as ZnO; 0.01 to 10 mole % of a specific rare earth oxide as R2 O3 (R represents lanthanum, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium or lutetium) 0.01 to 10 mole % of an alkaline earth oxide as MO (M represents calcium, strontium or barium) and 0.05 to 30 mole % of cobalt oxide as CoO.

Kohji Hayashi

Papers

Non-linear resistor

Nicht-linearer widerstand