H
Hong Sik Shin
Researcher at Chungnam National University
Publications - 7
Citations - 66
Hong Sik Shin is an academic researcher from Chungnam National University. The author has contributed to research in topics: Germanide & Schottky barrier. The author has an hindex of 4, co-authored 7 publications receiving 65 citations.
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Journal ArticleDOI
Conduction Mechanism and Reliability Characteristics of a Metal–Insulator–Metal Capacitor with Single ZrO2 Layer
Hyuk-Min Kwon,In Shik Han,Sang Uk Park,Jung Deuk Bok,Yi Jung Jung,Hong Sik Shin,Chang Yong Kang,Byoung Hun Lee,Raj Jammy,Ga-Won Lee,Hi Deok Lee +10 more
TL;DR: In this paper, the electrical characteristics and reliability of ZrO2-based metal-insulator-metal (MIM) capacitors are investigated, and the extracted dynamic constant and trap energy level were 4.013 and 0.963 eV, respectively.
Journal ArticleDOI
Ni germanide utilizing Ytterbium interlayer for high-performance Ge MOSFETs
Ying-Ying Zhang,Jungwoo Oh,Shi Guang Li,Soon Yen Jung,Kee Young Park,Hong Sik Shin,Ga-Won Lee,Jin Suk Wang,Prashant Majhi,Hsing-Huang Tseng,Raj Jammy,Tae Sung Bae,Hi Deok Lee +12 more
TL;DR: In this paper, ytterbium (Yb) incorporation into NiGe is proposed to improve the thermal stability of Ni germanide for high-performance Ge metal-oxide-semiconductor field effect transistors (Ge MOSFETs).
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Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide
Ying-Ying Zhang,Soon Yen Jung,Jungwoo Oh,Hong Sik Shin,Se Kyung Oh,Jin Suk Wang,Prashant Majhi,Raj Jammy,Hi Deok Lee +8 more
TL;DR: In this article, a different physical mechanism for the formation of Ni silicide by incorporating rare earth (RE) metals such as ytterbium (Yb), erbium(Er), and dysprosium (Dy) was described.
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Microstructural Innovation of Ni Germanide on Ge-on-Si Substrate by Using Palladium Incorporation
Ying-Ying Zhang,Chel-Jong Choi,Jungwoo Oh,In Shik Han,Shi Guang Li,Kee Young Park,Hong Sik Shin,Ga-Won Lee,Jin Suk Wang,Prashant Majhi,Raj Jammy,Hi Deok Lee +11 more
TL;DR: In this article, a thermally stable Ni germanide using palladium incorporation is proposed for high performance germanium metal-oxide-semiconductor field effect transistors, and a microstructural analysis of the NiGermanide is performed in depth.
Journal ArticleDOI
Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal–Oxide–Semiconductor Field Effect Transistors
Hong Sik Shin,Se Kyung Oh,Min-Ho Kang,Hyuk-Min Kwon,Jungwoo Oh,Prashant Majhi,Raj Jammy,Ga-Won Lee,Hi Deok Lee +8 more
TL;DR: In this paper, the thermal stability of Ni-germanide is improved by utilizing Ni/Co/Ni/TiN structure for Ge metal-oxide-semiconductor field effect transistors (MOSFETs) technology.