H
Hongbin Fang
Researcher at Applied Materials
Publications - 6
Citations - 616
Hongbin Fang is an academic researcher from Applied Materials. The author has contributed to research in topics: Layer (electronics) & Physical vapor deposition. The author has an hindex of 6, co-authored 6 publications receiving 616 citations.
Papers
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Patent
Multiple precursor cyclical deposition system
TL;DR: In this paper, the authors present a method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the pre-computed precurors to a substrate structure at least partially overlap.
Patent
Method for depositing refractory metal layers employing sequential deposition techniques
Hongbin Fang,Hyungsuk Alexander Yoon,Ken Kaung Lai,Chi Chung Young,James Horng,Ming Xi,Michael X. Yang,Hua Chung +7 more
TL;DR: In this article, a method for forming a tungsten layer on a substrate surface is described, which includes positioning the substrate surface in a processing chamber and exposing the substrate surfaces to a boride.
Patent
Methods for depositing tungsten layers employing atomic layer deposition techniques
Ken Kaung Lai,Ravi Rajagopalan,Amit Khandelwal,Madhu Moorthy,Srinivas Gandikota,Joseph Castro,Avgerinos V. Gelatos,Cheryl Knepfler,Ping Jian,Hongbin Fang,Chao Ming Huang,Ming Xi,Michael X. Yang,Hua Chung,Jeong Soo Byun +14 more
TL;DR: In this paper, a method for forming a tungsten-containing layer on a substrate is provided, which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a Tungstencontaining precursor and a reductant into the process chamber.
Patent
Formation of composite tungsten films
Ken K. Lai,Jeong Soo Byun,Frederick C. Wu,Ramanujapuran A. Srinivas,Avgerinos V. Gelatos,Mei Chang,Moris Kori,Ashok Sinha,Hua Chung,Hongbin Fang,Alfred Mak,Michael X. Yang,Ming Xi +12 more
TL;DR: In this paper, the methods for the deposition of tungsten films are provided. And they include depositing a nucleation layer by alternatively adsorbing a tengsten precursor and a reducing gas on a substrate.
Patent
Formation of titanium nitride films using a cyclical deposition process
Hua Chung,Hongbin Fang,Ken Lai,Jeong Byun,Alfred Mak,Michael Yang,Ming Xi,Moris Kori,Xinliang Lu,Ping Jian +9 more
TL;DR: In this article, a cyclical deposition process is used to form a titanium-oxide layer on a substrate. But the method is not suitable for use as an electrode of a three-dimensional capacitor structure such as for example, trench capacitors and crown capacitors.