M
Michael Yang
Researcher at Applied Materials
Publications - 7
Citations - 923
Michael Yang is an academic researcher from Applied Materials. The author has contributed to research in topics: Layer (electronics) & Tungsten film. The author has an hindex of 6, co-authored 7 publications receiving 923 citations.
Papers
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Patent
Chamber hardware design for titanium nitride atomic layer deposition
Anh N. Nguyen,Steve H. Chiao,Xiaoxiong Yuan,Lawrence Lei,Ming Xi,Michael Yang,Sean M. Seutter,Toshio Itoh +7 more
TL;DR: A lid assembly and a method for ALD is provided in this article, which includes a lid plate having an upper and lower surface, a manifold block disposed on the upper surface having one or more cooling channels formed therein, and one of the valves on the manifold block.
Patent
Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application
Ling Chen,Hua Chung,Sean M. Seutter,Michael Yang,Ming Xi,Vincent W. Ku,Dien-Yeh Wu,Alan Ouye,Norman Nakashima,Barry Chin,Hong Zhang +10 more
TL;DR: In this paper, a method for forming a metal interconnect on a substrate is provided, which consists of depositing a refractory metal-containing barrier layer having a thickness less than about 20 angstroms on at least a portion of a metal layer by alternately introducing one or more pulses of metal containing compound and one or multiple pulses of nitrogen containing compound.
Patent
Deposition of tungsten for the formation of conformal tungsten silicide
TL;DR: In this paper, a method and apparatus for depositing a tungsten film by cyclical deposition in the formation of Tungsten silicide for use in capacitor structures is provided.
Patent
Formation of titanium nitride films using a cyclical deposition process
Hua Chung,Hongbin Fang,Ken Lai,Jeong Byun,Alfred Mak,Michael Yang,Ming Xi,Moris Kori,Xinliang Lu,Ping Jian +9 more
TL;DR: In this article, a cyclical deposition process is used to form a titanium-oxide layer on a substrate. But the method is not suitable for use as an electrode of a three-dimensional capacitor structure such as for example, trench capacitors and crown capacitors.
Patent
Processing chamber and method of distributing process fluids therein to facilitate sequential deposition of films
TL;DR: In this paper, a semiconductor system includes a body defining a processing chamber, a holder disposed within the processing chamber to support the substrate, and a fluid injection assembly to facilitate sequential deposition of films.