An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A wireless IC device includes a wireless IC chip arranged to process a radio signal, a power-supply circuit board that is connected to the wireless IC chip and that includes a power supply circuit including at least one coil pattern, and a radiation plate arranged to radiate a transmission signal supplied from the power-supply circuit board and/or receiving a reception signal to supply the reception signal to the power-supply circuit board. The radiation plate includes an opening provided in a portion thereof and a slit connected to the opening. When viewed in plan from the direction of the winding axis of the coil pattern, the opening in the radiation plate overlaps with an inner area of the coil pattern and the area of the inner area is approximately the same as that of opening.

Wireless IC device

An antenna device includes an antenna coil including a first conductive pattern disposed on a first major surface of a magnetic sheet, a second conductive pattern disposed on a first major surface of a non-magnetic sheet, and an interlayer conductor connecting the first conductive pattern and second conductive pattern. The antenna coil including the first conductive pattern and second conductive pattern defines a spiral or substantially spiral pattern. The antenna device is a resin multilayer structure in which its base body is a laminate of the magnetic layer and non-magnetic layer and the predetermined patterns are disposed inside and outside the laminate.

Antenna device and communication terminal apparatus

A radio IC device includes an electromagnetic coupling module includes a radio IC chip arranged to process transmitted and received signals and a feed circuit board including an inductance element. The feed circuit board includes an external electrode electromagnetically coupled to the feed circuit, and the external electrode is electrically connected to a shielding case or a wiring cable. The shielding case or the wiring cable functions as a radiation plate. The radio IC chip is operated by a signal received by the shielding case or the wiring, and the answer signal from the radio IC chip is radiated from the shielding case or the wiring cable to the outside. A metal component functions as the radiation plate, and the metal component may be a ground electrode disposed on the printed wiring board.

Radio IC device

A wireless IC device includes a wireless IC chip, a power supply circuit board upon which the wireless IC chip is mounted, and in which a power supply circuit is provided, the power supply circuit includes a resonant circuit having a predetermined resonant frequency, and a radiation pattern, which is adhered to the underside of the power supply circuit board, for radiating a transmission signal supplied from the power supply circuit, and for receiving a reception signal to supply this to the power supply circuit. The resonant circuit is an LC resonant circuit including an inductance device and capacitance devices. The power supply circuit board is a multilayer rigid board or a single-layer rigid board, and between the wireless IC chip and the radiation pattern is connected by DC connection, magnetic coupling, or capacitive coupling.

Wireless ic device and component for wireless ic device

Even if the insulated isolation structure which makes element isolation using partial and full isolation combined use technology is manufactured, the manufacturing method of a semiconductor device which can manufacture the semiconductor device with which characteristics good as a semiconductor element formed in the SOI layer where insulated isolation was made are obtained is obtained. Etching to an inner wall oxide film and an SOI layer is performed by using as a mask the resist and trench mask which were patterned, and the trench for full isolation which penetrates an SOI layer and reaches an embedded insulating layer is formed. Although a part of CVD oxide films with which the resist is not formed in the upper part are removed at this time, since a silicon nitride film is protected by the CVD oxide film, the thickness of a silicon nitride film is kept constant. Then, after removing the resist and depositing an isolation oxide film on the whole surface, an isolation oxide film is flattened in good thickness precision in the height specified by the thickness of a silicon nitride film by performing CMP treatment which used the silicon nitride film as the polishing stopper.

Horita Katsuyuki

Papers

Manufacturing method of semiconductor device