H
Hosni Saidi
Researcher at Tunis University
Publications - 10
Citations - 87
Hosni Saidi is an academic researcher from Tunis University. The author has contributed to research in topics: Quantum well & Electronic band structure. The author has an hindex of 6, co-authored 10 publications receiving 69 citations. Previous affiliations of Hosni Saidi include Tunis El Manar University.
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High-efficiency of AlInGaN/Al(In)GaN-delta AlGaN quantum wells for deep-ultraviolet emission
TL;DR: In this paper, the authors investigated the band structure and optical gain properties of AlInGaN/AlInGAN-delta-AlGaN quantum wells for deep-ultraviolet light emitting and lasers diodes with wavelength λ ∼229nm and TE-polarized optical gain peak intensity ∼1.7 times larger than the conventional AlInN-Delta-GaN was proposed and investigated in this work.
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Self-consistent optimization of [111]-AlGaInAs/InP MQWs structures lasing at 1.55 μm by a genetic algorithm
TL;DR: In this paper, a laser diode based on InP substrate using quaternary compound material of AlGaInAs in both quantum wells and barriers with different composition is presented.
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Hole intersubband transitions in wurtzite and zinc-blende strained AlGaN/GaN quantum wells and its interband interaction dependence
TL;DR: In this paper, the effect of the interband interaction between conduction (CB) and valence (VB) bands has been taken into account explicitly, and the 8-bands k.p model for both wurtzite (WZ) and ZB structures was used to calculate subband energies and wavefunctions of Al0.3Ga0.7N/GaN quantum wells (QWs).
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Band Structure, Optical Transition, and Optical Gain of Type-II InAs(N)/GaSb Quantum Wells Laser Diodes Modeled Within 16-Band and 14-Band $kp$ Model
TL;DR: In this paper, the authors used both 16-band and 14-band Hamiltonians to investigate electronic band-structure, optical gain and transitions of two type-II quantum wells with InAs and InAs0.98N0.02 as the active layers surrounded by a GaSb layer, respectively.
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Oscillator strengths for the intersubband transitions in GaAs/InGa1–xAs quantum wells and its strain dependence
TL;DR: In this paper, the band structure, interband and oscillator strengths for valence intersubband transitions have been theoretically calculated for highly strained InxGa1-xAs/GaAs quantum wells with different indium concentrations xIn within the k.p method where matrix Hamiltonian is solved by iteration with the Bir-Pus strain Hamiltonian.