H
Hui Yang
Researcher at Beijing Jiaotong University
Publications - 10
Citations - 43
Hui Yang is an academic researcher from Beijing Jiaotong University. The author has contributed to research in topics: Thin-film transistor & Amorphous solid. The author has an hindex of 3, co-authored 10 publications receiving 18 citations.
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Annealing temperature effects on the structural and electrical properties of N-doped In-Zn-Sn-O thin film transistors
TL;DR: In this article, the effects of annealing temperature on the structural and electrical properties of the N-doped In-Zn-Sn-O (IZTO:N) thin film transistors (TFTs) were investigated.
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Annealing atmosphere-dependent electrical characteristics and bias stability of N-doped InZnSnO thin film transistors
TL;DR: In this article, the dependence of electrical characteristics and gate bias stress stability of N-doped InZnSnO (IZTO:N) thin film transistors (TFTs) on annealing atmosphere was investigated.
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Achieving high performance thin film transistors based on gallium doped indium zinc tin oxide
TL;DR: In this article, a bottom-gate amorphous oxide thin film transistors with a channel layer of gallium doped indium-zinc-tin oxide (IZTO:Ga) have been fabricated by radio frequency magnetron sputtering at room temperature on SiO2/Si substrate.
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Amorphous InZnO:Li/ZnSnO:Li dual-active-layer thin film transistors
TL;DR: In this paper, a dual-stacked InZnO and ZnSnO (IZO:Li/ZTO:Li) dual-active-layer thin film transistors (TFTs) were fabricated by radiofrequency (RF) magnetron sputtering.
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Enhancement-mode thin film transistor using amorphous phosphorus-doped Indium–Zinc–Tin-Oxide channel layer
TL;DR: In this paper, optical properties of amorphous Phosphorus-doped Indium-Zinc-Tin Oxide (a-IZTO:P) thin films and their feasibility as the channel layer for thin film transistors (TFTs) were investigated.