Crosstalk is probably one of the main perceptual factors contributing to perceived image quality and visual comfort. The Video Quality Experts Group (VQEG) within their 3D video quality project is specifying a practical measurement procedure that will produce consistent results across laboratories. This paper is part of that effort. Two different method of measuring cross talk on shutter glasses stereo displays have been studied. One is based on time average luminance measurements and the other on temporal measurements. The results show that crosstalk is roughly 0.5% but that there are differences in the crosstalk between the two eyes in the shutter glasses. ©2011 Society for Information Display

SID Symposium Digest of Technical Papers

High-performance a-IGZO TFT with ZrO2 gate dielectric fabricated at room temperature

Co-doping: an effective strategy for achieving stable p-type ZnO thin films

Abstract This paper presents the post-annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor's (TFT) electrical characteristics, and its contact resistance ( R C ) with thermally grown SiO 2 gate dielectric on silicon wafer substrates. The electrical characteristics of two types of TFTs, one post-annealed and the other not, are compared, and a simple model of the source and drain contacts is applied to estimate the R C by a transmission line method (TLM). Consequently, it has been found that the post-annealing does improve the TFT performances; in other words, the saturation mobility ( μ sat ), the on/off current ratio ( I ON/OFF ), and the drain current ( I D ) all increase, and the R C and the threshold voltage ( V T ) both decrease. As-fabricated TFTs have the following electrical characteristics; a saturation mobility ( μ sat ) as large as 0.027 cm 2 /V s, I ON/OFF of 10 3 , sub-threshold swing (SS) of 0.49 V/decade, V T of 32.51 V, and R C of 969 MΩ, and the annealed TFTs have improved electrical characteristics as follows; a μ sat of 3.51 cm 2 /V s, I ON/OFF of 10 5 , SS of 0.57 V/decade, V T of 27.2 V, and R C of 847 kΩ.

The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

Indium-tin-zinc-oxide (ITZO) as the channel layer grown by co-sputtering of ZnO target and ITO target in the bottom gate thin-film transistors (TFTs) is proposed in this work. The microstructure and optical properties of ITZO thin films at different annealing temperatures were analyzed. The impact of various annealing temperatures on the ITZO TFT performance characteristics was systematically investigated as well. It was found that ITZO TFT with annealing temperature of 300 °C exhibits excellent electrical performance with a high saturation field-effect mobility (μsat) of 27.4 cm2 V−1 s−1, a low threshold voltage (Vth) of −0.64 V, a small subthreshold swing (SS) value of 0.23 V per decade, and the high on-off current ratio (Ion/Ioff) of 1.8 × 107. In addition, it also shows good output curves including gate control capabilities and good electrode contact as well as extreme atmospheric stability. As shown by photoluminescence (PL) analysis and X-ray photoelectron spectroscopy (XPS) analysis, the beneficial effects of various annealing temperatures on device performance are attributed to the reorganization of the amorphous network and the control of defect chemistry in the films. The correlation between the post-deposition thermal treatment and the characteristics of a transistor was investigated and excellent performance of the transistor was demonstrated.

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Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering

Preparation and electrical properties of N-doped ZnSnO thin film transistors

Annealing temperature effects on the structural and electrical properties of N-doped In-Zn-Sn-O thin film transistors

Effect of thermal annealing on the electrical characteristics of an amorphous ITZO:Li thin film transistor fabricated using the magnetron sputtering method

Yaobin Ma

Papers

Preparation and electrical properties of N-doped ZnSnO thin film transistors

Annealing temperature effects on the structural and electrical properties of N-doped In-Zn-Sn-O thin film transistors

Effect of thermal annealing on the electrical characteristics of an amorphous ITZO:Li thin film transistor fabricated using the magnetron sputtering method

Annealing atmosphere-dependent electrical characteristics and bias stability of N-doped InZnSnO thin film transistors

Preparation and electrical characteristics of N-doped In-Zn-Sn-O thin film transistors by radio frequency magnetron sputtering