H
Hung Chang Lin
Researcher at Westinghouse Electric
Publications - 1
Citations - 22
Hung Chang Lin is an academic researcher from Westinghouse Electric. The author has contributed to research in topics: Field-effect transistor & Gate dielectric. The author has an hindex of 1, co-authored 1 publications receiving 22 citations.
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Patent
Method of making a planar graded channel MOS transistor
TL;DR: In this article, a double diffusion through a self-aligned silicon gate is proposed for fabrication of a planar narrow channel MOSFET, where a first type dopant is diffused into the same selfaligned window of the source diffusion already diffused with another dopant.