Method of making a planar graded channel MOS transistor

TLDR: In this article, a double diffusion through a self-aligned silicon gate is proposed for fabrication of a planar narrow channel MOSFET, where a first type dopant is diffused into the same selfaligned window of the source diffusion already diffused with another dopant.

Abstract: The method of fabrication of a planar narrow channel metal oxide semiconductor field effect transistor (MOSFET) by a double diffusion through a self-aligned silicon gate wherein a first type dopant is diffused into the same self-aligned window of the source diffusion already diffused with a second type dopant. The diffused source and drains are self-aligned by means of the silicon gate, thus permitting narrow gate lengths. The diffusion profile is such that the impurity concentration near the source is higher than that near the drain. When a reverse bias is applied between, for example, an n-type drain and a p-type diffused region, the depletion layer cannot widen as much toward the source as a uniform channel because of the impurity concentration profile. Thus a narrow channel length can be used withoout drain-source punch-through at low voltages. Meanwhile, the self-aligned silicon gate permits a close spacing between the source and drain contacts, thus reducing the feedback capacitance between the drain and the gate.