H
Hyuk-soon Choi
Researcher at Samsung
Publications - 24
Citations - 176
Hyuk-soon Choi is an academic researcher from Samsung. The author has contributed to research in topics: Layer (electronics) & Transistor. The author has an hindex of 7, co-authored 24 publications receiving 176 citations.
Papers
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Patent
E-Mode High Electron Mobility Transistors And Methods Of Manufacturing The Same
TL;DR: In this article, an E-mode high electron mobility transistor (HEMT) with a 2Dimensional Electron Gas (2DEG) barrier and a gate electrode is described.
Patent
High electron mobility transistors and methods of manufacturing the same
Hyuk-soon Choi,Jongseob Kim,Jai-Kwang Shin,Chang-Yong Um,Jae-joon Oh,Jong-Bong Ha,Ki-Ha Hong,In-jun Hwang +7 more
TL;DR: In this article, a method of forming a high electron mobility transistor (HEMT) includes forming a device unit, including a channel layer and a channel supply layer, on a first substrate, adhering a second substrate to the device unit; removing the first substrate; and forming an high resistivity region by ion-implanting impurities into at least a portion of the channel layer.
Patent
Chemical sensor using thin-film sensing member
TL;DR: In this article, a chemical sensor is configured to measure the change in electrical characteristics when a compound to be sensed is adsorbed on the sensing member, provided that the chemical sensor array includes an array of chemical sensors.
Patent
Methods of manufacturing high electron mobility transistors
Hyuk-soon Choi,Jung-Hee Lee,Jai-Kwang Shin,Jae-joon Oh,Jong-Bong Ha,Jong Seob Kim,In-jun Hwang,Ki-ha Hong,Ki-Sik Im,Ki-Won Kim,Dong-Seok Kim +10 more
TL;DR: In this paper, a first material layer on a substrate, increasing electric resistance of the first layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, is proposed.
Patent
High electron mobility transistors exhibiting dual depletion and methods of manufacturing the same
TL;DR: In this paper, a dual depletion region (AZ) exists between the source electrode and the drain electrode in a high electron mobility transistors (HEMT) exhibiting dual depletion and methods of manufacturing the same.