Patent
E-Mode High Electron Mobility Transistors And Methods Of Manufacturing The Same
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TLDR
In this article, an E-mode high electron mobility transistor (HEMT) with a 2Dimensional Electron Gas (2DEG) barrier and a gate electrode is described.Abstract:
An Enhancement-mode (E-mode) high electron mobility transistor (HEMT) includes a channel layer with a 2-Dimensional Electron Gas (2DEG), a barrier layer inducing the 2DEG in the channel layer, source and drain electrodes on the barrier layer, a depletion layer on the barrier layer between the source and drain electrodes, and a gate electrode on the depletion layer. The barrier layer is recessed below the gate electrode and the depletion layer covers a surface of the recess and extends onto the barrier layer around the recess.read more
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References
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Power semiconductor device
TL;DR: In this paper, a gate electrode is disposed, through a gate insulating film, in a trench adjacent to the main cell, and a buffer resistor having an infinitely large resistance value is inserted between the buffer layer and emitter electrode.
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