A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process. Alternatively, the nucleus formation process is further performed after the cycle is repeatedly performed a plurality of times.

Method of manufacturing semiconductor device and substrate processing apparatus

An insulating film having features such as a low dielectric constant, a low etching rate and a high insulating property is formed. An oxycarbonitride film is formed on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a gas containing an element to the substrate; (b) supplying a carbon-containing gas to the substrate; (c) supplying a nitrogen-containing gas to the substrate; and (d) supplying an oxygen-containing gas to the substrate.

Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus

The present invention provides a method for manufacturing a semiconductor device comprising a III-V semiconductor substrate, and an insulating layer deposited on the substrate by Atomic Layer Deposition (ALD). The use of ALD to deposit the insulating layer was found to facilitate the creation of active devices that avoid Fermi layer pinning. In addition, such insulating layer may be advantageously used as a passivation layer in III-V substrate based active devices and transistors.

Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate

In a semiconductor device, an organic insulation pattern is disposed between first and second rerouting patterns. The organic insulation pattern may absorb the physical stress that occurs when the first and second rerouting patterns expand under heat. Since the organic insulation pattern is disposed between the first and second rerouting patterns, insulating properties can be increased relative to a semiconductor device in which a semiconductor pattern is disposed between rerouting patterns. Also, since a seed layer pattern is disposed between the first and second rerouting patterns and the organic insulation pattern and between the substrate and the organic insulation pattern, the adhesive strength of the first and second rerouting patterns is enhanced. This also reduces any issues with delamination. Also, the seed layer pattern prevents the metal that forms the rerouting pattern from being diffused to the organic insulation pattern. Therefore, a semiconductor device with enhanced reliability may be implemented.

Semiconductor device and method of forming the same

Processes and systems for formation of high voltage, anodic oxide on a valve metal anode. The processes generally includes immersing a valve metal anode in an electrolyte forming bath comprised of a formation electrolyte, performing an anodization step; and maintaining or regulating the temperature of the formation electrolyte accurately at a temperature at or below 40° C during the anodization step. The anodization firstly under constant current until a target potential is reached and secondly under constant potential at the target potential until the current falls below a predetermined termination current level. The systems generally include a tank configured to receive one or more anodes in an electrolyte forming bath comprised of a formation electrolyte; and a subsystem for cooling and maintaining the formation electrolyte at the desire processing temperature. The systems may further include electronic controls for monitoring and adjusting system or process parameters.

Processes and systems for formation of high voltage, anodic oxide on a valve metal anode

A method for forming capacitor using a tantalum oxide (TaO5) layer is disclosed. Tantalum oxide is deposited by an atomic layer deposition ALD process so that the step-coverage of the tantalum oxide layer is improved, and accordingly the electrical characteristics of the capacitor are improved.

Method for forming a tantalum oxide capacitor

PURPOSE: A method for fabricating a tantalum oxide capacitor is provided to improve a step coverage characteristic of a tantalum oxide thin film and an electrical characteristic of a capacitor by uniformly depositing the tantalum oxide thin film through an atomic layer deposition(ALD) method. CONSTITUTION: The upper portion of a lower electrode(100) is nitridized. A tantalum-nitride thin film(104) is deposited on the nitridized layer(102) through an ALD method. The tantalum-nitride thin film is reacted with oxygen to form the tantalum oxide thin film. An upper electrode is formed on the tantalum oxide thin film.

Method for manufacturing Tantalium Oxide capacitor

Disclosed is a method for depositing a silicon nitride layer of a semiconductor device. The method includes the steps of providing Al-based compound as a catalyst, and reacting DCS with NH 3 by using the Al catalyst, thereby depositing the silicon nitride layer. DCS is reacted with NH 3 by using the Al catalyst when depositing the silicon nitride layer, so dissolution of DCS is promoted by means of the Al catalyst, so that the silicon nitride layer is deposited at a high speed, thereby improving productivity of semiconductor devices. The silicon nitride layer is deposited by using DCS under a low-temperature condition of about 500 to 800° C., without deteriorating device characteristics.

Hyung Kyun Kim

Papers

Method for forming a tantalum oxide capacitor

Method for manufacturing Tantalium Oxide capacitor

Method for depositing silicon nitride layer of semiconductor device