Patent
Method for forming a tantalum oxide capacitor
Dong-Su Park,Hyung Kyun Kim +1 more
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TLDR
In this paper, a method for forming a capacitor using a tantalum oxide (TaO5) layer is described, which is deposited by an atomic layer deposition ALD process so that the step-coverage of the Tantalum oxide layer is improved, and accordingly the electrical characteristics of the capacitor are improved.Abstract:
A method for forming capacitor using a tantalum oxide (TaO5) layer is disclosed. Tantalum oxide is deposited by an atomic layer deposition ALD process so that the step-coverage of the tantalum oxide layer is improved, and accordingly the electrical characteristics of the capacitor are improved.read more
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References
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Patent
Atomic layer deposition with nitrate containing precursors
TL;DR: In this paper, metal nitrate-containing precursor compounds are employed in atomic layer deposition processes to form metal-containing films, eg metal, metal oxide, and metal nitride, which films exhibit an atomically abrupt interface and an excellent uniformity.
Patent
Methods for forming metal oxide layers with enhanced purity
TL;DR: In this paper, the authors employed an irradiation of either a metal oxide layer or a substrate in the presence of at least one of an oxidant and a metal source material, such that the reduced concentration of contaminant material is particularly useful as a dielectric layer within a capacitive device within a microelectronic fabrication.
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Atomically thin highly resistive barrier layer in a copper via
Fusen Chen,Ling Chen +1 more
TL;DR: In this article, a method of forming a copper via and the resultant structure is described, in which a thin layer of an insulating barrier material, such as aluminum oxide or tantalum nitride, is conformally coated onto the sides and bottom of the via hole, for example, by atomic layer deposition (ALD) to a thickness of less than 5nm, preferably less than 2nm and having an electrical resistivity of more than 500 microohm-cm.
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Process for making a mim capacitor
Douglas R. Roberts,E. Luckowski +1 more
TL;DR: In this paper, a process for forming a metal-insulator-metal (MIM) capacitor structure is described, where a recess is formed in the dielectric layer of a semiconductor substrate.
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Method of forming a capacitor of a semiconductor device
TL;DR: In this paper, a method of forming a capacitor of a semiconductor device, which specially treats the surface of a charge storage electrode of the lower in order to improve the poor stepcoverage of the Ta 2 O 5 film deposited by the PECVD method in the capacitor, prevents the leakage current from generating according to improving the electrical characteristic of the capacitor.