In this review, we describe the synthesis, physical properties, surface functionalization, and biological applications of silicon nanoparticles (also known as quantum dots) We compare them against current technologies, such as fluorescent organic dyes and heavy metal chalcogenide-based quantum dots In particular, we examine the many different methods that can be used to both create and modify these nanoparticles and the advantages they may have over current technologies that have stimulated research into designing silicon nanoparticles for in vitro and in vivo applications

Silicon nanoparticles: applications in cell biology and medicine.

Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices

Self-assembled synthesis of SERS-active silver dendrites and photoluminescence properties of a thin porous silicon layer

In this review, we describe recent progress made in the study of nanoparticles characterized by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Basic principles of STM measurements and single-electron tunneling phenomena through a single NP are summarized. We highlight the results of electrical and photonic properties on NPs studied by STM and STS. Because nanoparticles are single-digit nanometre in diameter, a single-electron transport on individual nanoparticles such as Coulomb blockade and resonant tunneling through discrete energy levels are investigated. Photon-emission from NPs is also introduced based on STM measurements. Novel single-nanoparticle functions such as stochastic blinking and one-write erasing behaviours are presented. This review provides an overview of nanoparticle characterization methods based on STM and STS that include the detailed understanding of the electrical and photonics properties of nanoparticles.

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Nanoparticle characterization based on STM and STS

Preparation and characterisation of luminescent alkylated-silicon quantum dots

A quantum-dot transistor based on silicon self-assembled quantum dots has been fabricated The device shows staircases and oscillations in the drain current at room temperature These data are interpreted as due to single electron tunneling through the dots located in the shortest current path between the source and the drain electrodes The dot size calculated from the data is ∼7 nm, which is consistent with the size of the self-assembled dots incorporated in the transistor

I. G. Kim

Papers

Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor