https://absimage.aps.org/image/MAR14/MWS_MAR14-2014-020819.pdf

Van der Waals heterostructures

2D material based photodetectors have attracted many research projects due to their unique structures and excellent electronic and optoelectronic properties. These 2D materials, including semimetallic graphene, semiconducting black phosphorus, transition metal dichalcogenides, insulating hexagonal boron nitride, and their various heterostructures, show a wide distribution in bandgap values. To date, hundreds of photodetectors based on 2D materials have been reported. Here, a review of photodetectors based on 2D materials covering the detection spectrum from ultraviolet to infrared is presented. First, a brief insight into the detection mechanisms of 2D material photodetectors as well as introducing the figure-of-merits which are key factors for a reasonable comparison between different photodetectors is provided. Then, the recent progress on 2D material based photodetectors is reviewed. Particularly, the excellent performances such as broadband spectrum detection, ultrahigh photoresponsivity and sensitivity, fast response speed and high bandwidth, polarization-sensitive detection are pointed out on the basis of the state-of-the-art 2D photodetectors. Initial applications based on 2D material photodetectors are mentioned. Finally, an outlook is delivered, the challenges and future directions are discussed, and general advice for designing and realizing novel high-performance photodetectors is given to provide a guideline for the future development of this fast-developing field.

Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

Exfoliated 2H molybdenum disulfide (MoS2) has unique properties and potential applications in a wide range of fields, but corresponding studies have been hampered by the lack of effective routes to it in bulk quantities. This study presents a rapid and efficient route to obtain exfoliated 2H MoS2, which combines fast sonication-assisted lithium intercalation and infrared (IR) laser-induced phase reversion. We found that the complete lithium intercalation of MoS2 with butyllithium could be effected within 1.5 h with the aid of sonication. The 2H to 1T phase transition that occurs during the lithium intercalation could be also reversed by IR laser irradiation with a DVD optical drive.

Fast and Efficient Preparation of Exfoliated 2H MoS2 Nanosheets by Sonication-Assisted Lithium Intercalation and Infrared Laser-Induced 1T to 2H Phase Reversion

Two-dimensional (2D) nanostructures are highly attractive for fabricating nanodevices due to their high surface-to-volume ratio and good compatibility with device design. In recent years 2D nanostructures of various materials including metal oxides, graphene, metal dichalcogenides, phosphorene, BN and MXenes, have demonstrated significant potential for gas sensors. This review aims to provide the most recent advancements in utilization of various 2D nanomaterials for gas sensing. The common methods for the preparation of 2D nanostructures are briefly summarized first. The focus is then placed on the sensing performances provided by devices integrating 2D nanostructures. Strategies for optimizing the sensing features are also discussed. By combining both the experimental results and the theoretical studies available, structure-properties correlations are discussed. The conclusion gives some perspectives on the open challenges and future prospects for engineering advanced 2D nanostructures for high-performance gas sensors devices.

Two-Dimensional Nanostructured Materials for Gas Sensing

The polarized optical spectra of the ions Ti3+, V3+, Cr3+, Mn3+, Co3+, and Ni3+ in corundum single crystals have been studied at temperatures from 4.2° to 1200°K. A theory of the band strength based on the point‐charge model and p‐d mixing has been developed and applied to the data with results in fair agreement with experiment. The effects of temperature show that the vibrational‐electronic contribution to band strength is quite small at low temperature but may be appreciable at high temperatures. The crystal‐field parameters have been calculated as convergent lattice sums. The observed trigonal‐field parameter has the opposite sign from that calculated by the point‐charge model if the impurity ion is assumed to occupy an Al3+ ion position in the lattice, but has the same sign as calculated for an ion 0.1 A displaced along the c3 axis toward the empty octahedral site. Details of the spectra have been interpreted as showing that the surroundings of an ion are distorted in some electronic states.

Optical spectra of transition-metal ions in corundum

Hexagonal molybdenum diselenide (MoSe2) multilayers were grown by chemical vapor deposition (CVD). A relatively high pressure (>760 Torr) was used during the CVD growth to achieve multilayers by creating multiple nuclei based on the two-dimensional crystal growth model. Our CVD-grown multilayer MoSe2 thin-film transistors (TFTs) show p-type-dominant ambipolar behaviors, which are attributed to the formation of Se vacancies generated at the decomposition temperature (650 °C) after the CVD growth for 10 min. Our MoSe2 TFT with a reasonably high field-effect mobility (10 cm2/V · s) exhibits a high photoresponsivity (93.7 A/W) and a fast photoresponse time (τrise ~ 0.4 s) under the illumination of light, which demonstrates the practical feasibility of multilayer MoSe2 TFTs for photodetector applications.

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Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector

Local-gate multilayer MoS2 phototransistors exhibit a photoresponsivity of up to 342.6 A W(-1) , which is higher by 3 orders of magnitude than that of global-gate multilayer MoS2 phototransistors. These simulations indicate that the gate underlap is critical for the enhancement of the photoresponsivity. These results suggest that high photoresponsivity can be achieved in indirect-bandgap multilayer MoS2 phototransistors by optimizing the optoelectronic design.

Giant Photoamplification in Indirect‐Bandgap Multilayer MoS2 Phototransistors with Local Bottom‐Gate Structures

Large-area and highly crystalline CVD-grown multilayer MoSe2 films exhibit a well-defined crystal structure (2H phase) and large grains reaching several hundred micrometers. Multilayer MoSe2 transistors exhibit high mobility up to 121 cm(2) V(-1) s(-1) and excellent mechanical stability. These results suggest that high mobility materials will be indispensable for various future applications such as high-resolution displays and human-centric soft electronics.

High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe2 Films on Insulating Substrates.

Photoluminescence properties of Eu3+:MgAl2O4 powder phosphor

Electron paramagnetic resonance (EPR), optical, infrared and Raman spectral studies have been carried out on vanadyl ions doped in polyvinylalcohol (PVA) films. The spin-Hamiltonian parameters (g and A) and the molecular orbital coefficients ($\beta_2^{*2} $ and k) have been evaluated. The values of spin-Hamiltonian parameters confirm that the vanadyl ions are present in PVA films as $VO^{2+}$ molecular ions in an octahedral site with a tetragonal compression $(C_{4V})$. The temperature variation EPR studies reveal that the variation of number of spins with temperature is in accordance with Boltzmann law. It is interesting to observe that the variation of susceptibility with temperature obeys Curie–Weiss law. The FT-IR and FT-Raman spectrum exhibits few bands, which are attributed to O–H, C–H, CQC and C–O groups of stretching and bending vibrations. The optical absorption spectrum exhibits two bands, which are assigned to $^2B_{2g}\rightarrow ^2B_{1g}$ and $^2B_{2g}\rightarrow ^2E_g$ transitions in the decreasing order of energy.

I. Omkaram

Papers

Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector

Giant Photoamplification in Indirect‐Bandgap Multilayer MoS2 Phototransistors with Local Bottom‐Gate Structures

High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe2 Films on Insulating Substrates.

Photoluminescence properties of Eu3+:MgAl2O4 powder phosphor

EPR, optical, infrared and Raman studies of VO2+ ions in polyvinylalcohol films