A method of generating masks for printing a pattern including a plurality of features having varying critical dimensions. The method includes the steps of: (1) obtaining data representing the pattern; (2) defining a plurality of distinct zones based on the critical dimensions of the plurality of features; (3) categorizing each of the features into one of the plurality of distinct zones; and (4) modifying the mask pattern for each feature categorized into a predefined distinct zone of the plurality of distinct zones.

Method of achieving CD linearity control for full-chip CPL manufacturing

A method and arrangement for characterizing features of a patterned material (2) on an underlying layer (7) is disclosed. According to the method, the patterned material is subjected to radiation (9) including a range of wavelengths such that the patterned material absorbs more radiation than the underlying layer, and the underlying layer reflects more radiation than the patterned material. Zeroth order reflected radiation (11) is measured and the reflectance measurement is expressed as a spectrum of the intensity of the reflected radiation as a function of the wavelength of the reflected radiation, or as an average reflectance over a range of wavelengths. The reflectance measurement can be correlated with features of the patterned material. An arrangement of equipment is disclosed for characterizing features of a patterned material according to the method.

Method and arrangement for characterizing micro-size patterns

A method of measuring bias of a minimum feature in a lithographic process uses creating an array of elements having a width and space corresponding to the minimum feature, and a length. The length change of the array element resulting from image shortening effect from a lithographic process is measured and the bias of the element in the width dimension is calculated. A test site having groups of array elements is described which facilitate automatic bias measurement of array lengths and separations and especially allows the use of non SEM metrology tools which is otherwise incapable of measuring the minimum feature width being monitored. Measurements by this method and test site used to control lithographic processing of substrates in manufacturing, routine monitoring of product substrates and lithographic tool and process for minimum bias, are disclosed.

Monitoring of minimum features on a substrate

A system and method for imaging biological samples on multiple surfaces of a support structure are disclosed. The support structure may be a flow cell through which a reagent fluid is allowed to flow and interact with the biological samples. Excitation radiation from at least one radiation source may be used to excite the biological samples on multiple surfaces. In this manner, fluorescent emission radiation may be generated from the biological samples and subsequently captured and detected by detection optics and at least one detector. The detected fluorescent emission radiation may then be used to generate image data. This imaging of multiple surfaces may be accomplished either sequentially or simultaneously. In addition, the techniques of the present invention may be used with any type of imaging system. For instance, both epifluorescent and total internal reflection methods may benefit from the techniques of the present invention.

Compensator for multiple surface imaging

A confocal microscope equipped with a light source, a rotary disk having holes, a highly sensitive image receiver or camera, an immersion lens, and a contact endpiece for contacting the skin and in which is engaged at least a lower part of the lens. The endpiece includes a central opening and abuts the skin about the central opening. The microscope allows for relative axial displacement of the contact endpiece relative to the lens.

Apparatus for in vivo observation of the microscopic structure of the skin or of a similar tissue

A system for inspecting and measuring the dimensions of patterned features on lithographic photomasks includes a confocal scanning microscope beneath which is mounted the photomask to be inspected. The photomask is moved to permit the imaging beam from the microscope to record reflectivity information at closely spaced points along a scan line at the metal-substrate interface within the photomask, and the unpatterned side of the mask is positioned facing the microscope so that the imaging beam passes through the transparent substrate material of the mask to the desired measurement plane. An objective lens specially corrected for imaging through transparent materials is used in the optical system, and compensating glass plates may be selectively placed between the objective lens and the photomask when the substrate of the mask is thinner than the thickness of transparent material for which the objective lens was corrected.

Ian R. Smith

Papers

Method and apparatus for measuring the dimensions of patterned features on a lithographic photomask