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Patent

Method and apparatus for measuring the dimensions of patterned features on a lithographic photomask

Ian R. Smith
TLDR
In this article, a system for inspecting and measuring the dimensions of patterned features on lithographic photomasks includes a confocal scanning microscope beneath which is mounted the photomask to be inspected.
Abstract
A system for inspecting and measuring the dimensions of patterned features on lithographic photomasks includes a confocal scanning microscope beneath which is mounted the photomask to be inspected. The photomask is moved to permit the imaging beam from the microscope to record reflectivity information at closely spaced points along a scan line at the metal-substrate interface within the photomask, and the unpatterned side of the mask is positioned facing the microscope so that the imaging beam passes through the transparent substrate material of the mask to the desired measurement plane. An objective lens specially corrected for imaging through transparent materials is used in the optical system, and compensating glass plates may be selectively placed between the objective lens and the photomask when the substrate of the mask is thinner than the thickness of transparent material for which the objective lens was corrected.

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Citations
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Patent

Method of achieving CD linearity control for full-chip CPL manufacturing

TL;DR: In this paper, a method of generating masks for printing a pattern including a plurality of features having varying critical dimensions is proposed, which includes the steps of: (1) obtaining data representing the pattern; (2) defining a pluralityof distinct zones based on the critical dimensions of the plurality of feature; (3) categorizing each of the features into one of the distinct zones; and (4) modifying the mask pattern for each feature categorized into a predefined distinct zone of the hierarchy of distinct zones.
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TL;DR: In this article, a method and arrangement for characterizing features of a patterned material (2) on an underlying layer (7) is disclosed, where the patterned materials are subjected to radiation (9) including a range of wavelengths such that the pattern material absorbs more radiation than the underlying layer, and the underlying surface reflects more radiation more than the patterning material.
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References
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Patent

Inspection system for array of microcircuit dies having redundant circuit patterns

TL;DR: In this article, a Fourier transform lens (34, 120) and an inverse Fourier transformation lens (54, 142) are employed along an optic axis to produce from an illuminated area of a patterned specimen wafer a spatial frequency spectrum whose frequency components can be selectively filtered to produce an image pattern of defects in the illuminated area.
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TL;DR: In this article, a system for determining surface profiles of specimens such as semiconductor wafers and for making linewidth measurements thereon includes a drive for mounting the wafer for oscillatory movement along a line and an optical imaging system overlying the Wafer for focusing a beam on a small spot on a wafer and including a photodetector for detecting the reflected spot from the Wafers.
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Method of inspecting the pattern on a photographic mask

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TL;DR: In this article, the pattern of the mask is printed on a photo-sensitive member prepared by forming an opaque or semitransparent photosensitive layer on a transparent substrate and an image of the printed pattern formed on the photosensitive member is inspected by the image processing technique.
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