Remaining useful lifetime prediction and extension of Si power devices have been studied extensively. Silicon carbide (SiC) power devices have been developed and commercialized. Specifically, SiC mosfet s have been utilized for the next generation high-voltage, high-power converters with smaller size and higher efficiency, covering various mainstream applications, including photovoltaic systems, electric vehicles, solid-state transformers, and more electric ships and airplanes. However, the SiC-based devices have different failure modes and mechanisms compared with Si counterparts. Therefore, a comprehensive review is critical to develop accurate lifetime prediction and extension strategies for SiC power converter systems. The SiC power device component-level failure modes and mechanisms are first investigated. Different accelerated lifetime tests and component-level lifetime models are then compared. Power converter system-level offline lifetime modeling techniques and software tools are further summarized. Besides, the SiC power converter condition monitoring strategies and health indicators are surveyed. The online measurement challenges are also studied. Furthermore, the system-level lifetime extension strategies are reviewed. By integrating device physics, statistical modeling, reliability engineering, and mechanical engineering with power electronics, this article is intended to provide a comprehensive overview, address existing challenges, and unfold new research opportunities regarding the SiC power converter real-time lifetime prediction and extension.

Overview of Real-Time Lifetime Prediction and Extension for SiC Power Converters

https://dr.ntu.edu.sg/bitstream/10356/151258/2/1-s2.0-S0360132321003322-main%20%281%29.pdf

Ten questions concerning active noise control in the built environment

In this paper, the lifetime prediction of power device modules based on the linear damage accumulation is studied in conjunction with simple mission profiles of converters. Superimposed power cycling conditions, which are called simple mission profiles in this paper, are made based on a lifetime model in respect to junction temperature swing duration. This model has been built based on 39 power cycling test results of 600-V 30-A three-phase-molded IGBT modules. Six tests are performed under three superimposed power cycling conditions using an advanced power cycling test setup. The experimental results validate the lifetime prediction of the IGBT modules based on the linear damage accumulation by comparing the test results with the predicted lifetime from the lifetime model. Furthermore, the test results show the importance of the junction temperature swing duration effect for the lifetime prediction of IGBT modules under power converter applications.

Validation of Lifetime Prediction of IGBT Modules Based on Linear Damage Accumulation by Means of Superimposed Power Cycling Tests

This article focuses on failure modes and lifetime testing of IGBT modules being one of the most vulnerable components in power electronic converters. IGBT modules have already located themselves in the heart of many critical applications, such as automotive, aerospace, transportation, and energy. They are required to work under harsh operational and environmental conditions for extended target lifetime that may reach 30 to 40 years in some applications. Therefore, addressing the reliability of IGBT modules is of paramount importance. The paper provides a comprehensive review on IGBT modules dominant failure modes, and long-term reliability. A detailed discussion on accelerated testing, and lifetime and degradation characterization considering thermo-mechanical stress is also presented in details.

A Review on IGBT Module Failure Modes and Lifetime Testing

Wear-out condition monitoring of IGBT modules with failure mode separation gives some benefits. First, it allows proactive maintenance plans. Further, depending on the failure mode, different proactive control strategies can be applied to inverters in order to improve the reliability and availability of power electronic systems. This paper proposes a new method for the separation of two representative wear-out failure modes of wire-bonded IGBT modules in a grid-connected inverter in real time. The proposed method requires just two preliminary I – V characterizations of IGBT modules. Further, only one monitoring parameter is used, and thus, it is cost-effective compared with using one more monitoring parameter in order to separate failure modes. Experimental results verify the validity and feasibility of the proposed method.

Separation of Wear-Out Failure Modes of IGBT Modules in Grid-Connected Inverter Systems

The electrification of the transportation sector is moving on at a fast pace. All car manufacturers have strong programs to electrify their car fleet to fulfill the demands of society and customers by offering carbon-neutral technologies to bring goods and persons from one location to another. Power electronics technology is, in this evolution, essential and also in a rapid development technology-wise. Some of the introduced technologies are quite mature, and the systems designed must have high reliability as they can be quite complicated from an electrical perspective. Therefore, this article focuses on the reliability of the used power electronic systems applied in electric vehicles (EVs) and hybrid EVs (HEVs). It introduces the reliability requirements and challenges given for the power electronics applied in EV/HEV applications. Then, the advances in power electronic components to address the reliability challenges are introduced as they individually contribute to the overall system reliability. The reliability-oriented design methodology is also discussed, including two examples: an EV onboard charger and the drive train inverter. Finally, an outlook in terms of research opportunities in power electronics reliability related to EV/HEVs is provided. It can be concluded that many topics are already well handled in terms of reliability, but issues related to complete new technology introduction are important to keep the focus on.

/pdf/reliability-of-power-electronic-systems-for-ev-hev-3jj2e48xde.pdf

Reliability of Power Electronic Systems for EV/HEV Applications

One of the most important causes of failure in wind power systems is due to the failures of the power converter and due to one of its most critical components, the power semiconductor devices. This paper proposes a novel derating strategy for the wind turbine system based on the reliability performance of the converter and the total energy production throughout its entire lifetime. An advanced reliability design tool is first established and demonstrated, in which the wind power system together with the thermal cycling of the power semiconductor devices are modeled and characterized under a typical wind turbine system mission profile. Based on the reliability design tools, the expected lifetime of the converter for a given mission profile can be quantified under different output power levels, and an optimization algorithm can be applied to extract the starting point and the amount of converter power derating which is necessary in order to obtain the target lifetime requirement with a maximum energy production capability. A nonlinear optimization algorithm has been implemented and various case studies of lifetime requirements have been analyzed. Finally, an optimized derating strategy for the wind turbine system has been designed and its impact has been highlighted.

Optimal Derating Strategy of Power Electronics Converter for Maximum Wind Energy Production with Lifetime Information of Power Devices

Because of the high cost of failure, the reliability performance of power semiconductor devices is becoming a more and more important and stringent factor in many energy conversion applications. Thus, the need for appropriate reliability analysis of the power electronics emerges. Due to its conventional approach, mainly based on failure statistics from the field, the reliability evaluation of the power devices is still a challenging task. In order to address the given problem, a MATLAB based reliability assessment tool has been developed. The Design for Reliability and Robustness (DfR2) tool allows the user to easily investigate the reliability performance of the power electronic components (or sub-systems) under given input mission profiles and operating conditions. The main concept of the tool and its framework are introduced, highlighting the reliability assessment procedure for power semiconductor devices. Finally, a motor drive application is implemented and the reliability performance of the power devices is investigated with the help of the DfR2 tool, and the resulting reliability metrics are presented.

/pdf/design-for-reliability-and-robustness-tool-platform-for-1hjnnoqcab.pdf

Design for reliability and robustness tool platform for power electronic systems — Study case on motor drive applications

Power electronics inverters are one of the major failure sources in motor drive systems, and power devices are one of the main causes of the power electronics inverter failures. Typically, an insulated-gate bipolar transistor (IGBT) module has multiple power devices due to some technical and cost advantages. This kind of configurations could have an asymmetric internal layout, which may lead to different thermal loadings and thereby lifetime difference of the power devices. Therefore, both the power rating and the lifetime of inverters are limited by the most stressed device. However, generally common data are provided for all devices in the datasheet and this may cause improper design of the inverters in terms of the lifetime and the power rating. In this paper, an effect of an asymmetric layout of IGBT modules on the reliability of motor drive inverters is studied based on a three-phase motor drive application with a 600 V, 30 A, three-phase transfer molded IGBT module. The thermal impedances of six IGBTs are investigated and its effect on thermal loadings of power devices is studied under the given mission profile. Then, their lifetimes are estimated and compared. Finally, this effect is verified by the experiments.

/pdf/effect-of-asymmetric-layout-of-igbt-modules-on-reliability-2dtxzhct25.pdf

Effect of Asymmetric Layout of IGBT Modules on Reliability of Motor Drive Inverters

Due to the increased cost, and time-demanding approach of conventional reliability improvement procedures, the transition towards model-based reliability assessment of power electronics becomes more and more crucial. Although important steps have been taken in this direction, the resulting lifetime prediction is still subject to different assumptions and uncertainties (e.g. mission profile data, modeling errors, lifetime models, etc.), Thus, this paper aims at investigating and quantifying the impact of the mission profile resolution on the reliability estimation of power IGBT modules and DC-link capacitors. For a 10 kW PV application case study, three mission profile sampling rates (1 minute/data, 30 minutes/data, and 60 minutes/data) are considered and benchmarked, with respect to the predicted lifetime of the power electronic components/system. Finally, an uncertainty analysis is performed for the resulting reliability metrics, and some initial guidelines for mission profile resolution selection are provided.

/pdf/impact-of-long-term-mission-profile-sampling-rate-on-the-7pgwuxtw2d.pdf

Ionut Vernica

Papers

Reliability of Power Electronic Systems for EV/HEV Applications

Optimal Derating Strategy of Power Electronics Converter for Maximum Wind Energy Production with Lifetime Information of Power Devices

Design for reliability and robustness tool platform for power electronic systems — Study case on motor drive applications

Effect of Asymmetric Layout of IGBT Modules on Reliability of Motor Drive Inverters

Impact of Long-Term Mission Profile Sampling Rate on the Reliability Evaluation of Power Electronics in Photovoltaic Applications