The present invention provides a light exposure pattern mask comprising an integrated circuit wiring pattern consisting of a plurality of wiring pattern elements and a dummy pattern consisting of a plurality of dummy pattern elements provided in the vicinity of ends of the wiring pattern elements. This enables to prevent an exposure failure in a wiring pattern element of small dimensions.

Light exposure pattern mask with dummy patterns and production method of the same

A photolithography mask for optically transferring a pattern formed in the mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, and at least one non-resolvable optical proximity correction feature disposed between two of the resolvable features to be printed, where the non-resolvable optical proximity correction feature has a transmission coefficient in the range of greater than 0% to less than 100%.

An optical proximity correction method utilizing gray bars as sub-resolution assist features

An exposure mask is provided, which includes: a light blocking opaque area blocking incident light; a translucent area; and a transparent area passing the most of incident light, wherein the translucent area generates the phase differences in the range of about −70° to about +70°.

Mask and manufacturing method of a semiconductor device and a thin film transistor array panel using the mask

A photomask includes: a transparent substrate having a transparent property against exposing light; a first light-shielding pattern formed on the transparent substrate and having a first dimension; a second light-shielding pattern formed on the transparent substrate and having a second dimension larger than the first dimension; and an opening provided in part of the transparent substrate where the first light-shielding pattern and the second light-shielding pattern are not formed. The first light-shielding pattern includes a first semi-light-shielding portion and an auxiliary pattern which is arranged within the first semi-light-shielding portion and allows the exposing light to pass through in an opposite phase with respect to the first semi-light-shielding portion. The second light-shielding pattern includes a second semi-light-shielding portion and a light-shielding portion which does not substantially allow the exposing light to pass through.

Photomask and pattern formation method using the same

PROBLEM TO BE SOLVED: To transfer a plurality of patterns having different periods or intervals simultaneously on a substrate in a good condition. SOLUTION: When transferring first patterns periodically arranged in a first direction and second patterns arranged in the first direction at longer intervals than the period of the first patterns, a light amount distribution of illumination light on a pupil plane of an illumination system is such that a light amount in four regions may be larger than that in the other regions. The four regions consist of two regions 41A and 41B arranged, being separated, in the X direction corresponding to the first direction nearly symmetrical about the optical axis BX and two regions 42A and 42B arranged, being separated, in the Y direction corresponding to a second direction perpendicular to the first direction nearly symmetrical about the optical axis BX. COPYRIGHT: (C)2009,JPO&INPIT

Exposure method and equipment, and device manufacturing method

PURPOSE:To provide a phase shift mask with which a wide production allowance is taken CONSTITUTION:The shifter material of auxiliary patterns 2 of the phase shift mask including main patterns 1 and the auxiliary patterns 2 is formed as a material having controlled light transmittance The light peak intensity in the sufficient main patterns and secondary light peak intensity of the regulated value or below are obtd by the auxiliary patterns 2 of a large width, by which the resolution of pattern forming regions is improved The large production allowance of the mask is taken by adopting the auxiliary patterns 2 of the large width The production stages for semi-light shielding films are omitted if this phase shift mask is applied to a halftone phase shift mask

Isao Mita

Papers

Phase shift mask and its production