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Patent

Phase shift mask and its production

Isao Mita, +1 more
TLDR
In this paper, the shifter material of auxiliary patterns 2 of the phase shift mask including main pattern 1 and auxiliary pattern 2 is formed as a material having controlled light transmittance, by which the resolution of pattern forming regions is improved.
Abstract
PURPOSE:To provide a phase shift mask with which a wide production allowance is taken CONSTITUTION:The shifter material of auxiliary patterns 2 of the phase shift mask including main patterns 1 and the auxiliary patterns 2 is formed as a material having controlled light transmittance The light peak intensity in the sufficient main patterns and secondary light peak intensity of the regulated value or below are obtd by the auxiliary patterns 2 of a large width, by which the resolution of pattern forming regions is improved The large production allowance of the mask is taken by adopting the auxiliary patterns 2 of the large width The production stages for semi-light shielding films are omitted if this phase shift mask is applied to a halftone phase shift mask

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TL;DR: A photomask includes: a transparent substrate having a transparent property against exposing light; a first light-shielding pattern formed on the transparent substrate and having a first dimension; a second light-helming pattern consisting of a second dimension larger than the first dimension.
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TL;DR: In this article, the problem of transferring a plurality of patterns having different periods or intervals simultaneously on a substrate in a good condition was solved by transferring first patterns periodically arranged in a first direction and second patterns arranged in the first direction at longer intervals than the period of the first patterns.