PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting element which has high flexibility of design and moreover, which has less variations within a plane, moreover using a simple process. SOLUTION: This method of manufacturing the semiconductor light-emitting element contains: a process of forming a convex part on a principal plane of a substrate 110 for manufacturing the element; and subsequently a process of forming a light-emitting part on a crest plane of the convex part. The process of forming the convex part comprises each process of: (a) forming a mask layer 161, extending in parallel with the substrate 110 direction on the principal plane of the substrate for manufacturing the element; (b) performing wet-etching by using an etchant, and forming a convex part upper layer, in which a cross-sectional shape thereof is an isosceles trapezoid and an inclination of a side surface thereof is θ U ; and subsequently (c) changing a temperature of the etchant, performing the wet-etching by using side surfaces of the mask layer and the convex part upper layer as a mask for etching, and forming a convex part lower layer, in which a cross section shape thereof is an isosceles trapezoid and the inclination of a side surface thereof is θ D (where θ D ≠θ U ). COPYRIGHT: (C)2010,JPO&INPIT

Semiconductor light-emitting element and manufacturing method of the same, and convex part provided in ground, and convex part forming method in ground

The invention discloses an indium arsenide single wafer dislocation corrosion solution and a dislocation corrosion detection method and relates to the technical field of defect detection. The indium arsenide single wafer dislocation corrosion solution is mainly prepared from hydrochloric acid, sulfuric acid and water. Raw materials of the provided dislocation corrosion solution are low in price and easy to obtain, and the corrosion efficiency is high. The invention also provides the dislocation corrosion detection method adopting the dislocation corrosion solution. The method comprises the following steps of placing indium arsenide single wafers in the corrosion solution for corrosion to obtain indium arsenide single wafers which are subjected to dislocation corrosion; cleaning the surfaces of the indium arsenide single wafers which are subjected to dislocation corrosion and observing the wafers. The provided dislocation corrosion detection method has the advantages of simple operationand high corrosion efficiency, and the dislocation in the indium arsenide single wafers can be quickly and clearly displayed.

Indium arsenide single wafer dislocation corrosion solution and dislocation corrosion detection method

The present disclosure is directed to a 2.5-inch storage device carrier suitable for accommodating different thicknesses of 2.5-inch storage devices. A rotatable storage device holding element is provided with multiple bearing surfaces of differing heights to come into contact with storage devices of different thicknesses and securely hold the storage device within the storage carrier.

Adjustable storage device carrier

PURPOSE:To provide the titled etching soln contg an alkali dichromate, hydrochloric acid and acetic acid, giving a mirror-finished surface, and having high reproducibility in etching depth CONSTITUTION:This etching soln is an aqueous soln contg an alkali dechromate such as potassium dichromate or sodium dichromate, hydrochloric acid and acetic acid When a crystal of a III-V group compound is etched with the etching soln, the formation of etching pits can be prevented, and a mirror-finished surface can be obtd with high reproducibility in etching depth The shape of the cross-section of the etched crystal is independent of the crystal orientation, so the etching soln can be used well as an etching soln for mesa etching

Iwane Ganzou

Papers

Chemical etching solution for crystal of iii-v group compound