I
Izya Bol
Researcher at Xerox
Publications - 3
Citations - 73
Izya Bol is an academic researcher from Xerox. The author has contributed to research in topics: Field-effect transistor & Schottky diode. The author has an hindex of 3, co-authored 3 publications receiving 73 citations.
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Patent
Self-aligned Schottky metal semi-conductor field effect transistor with buried source and drain
TL;DR: In this paper, a semi-conductor structure and particularly a high speed VLSI Self-Aligned Schottky Metal Semi-Conductor Field Effect Transistor with buried source and drain, fabricated by the ion implantation of source and sink areas at a predetermined range of depths followed by very localized laser annealing to electrically reactivate the amorphous buried sink and drain areas thereby providing effective vertical separation of the channel from the buried sink.
Patent
Application of grown oxide bumper insulators to a high-speed VLSI SASMESFET
Keming W. Yeh,Izya Bol +1 more
TL;DR: In this article, a high-speed VLSI self-aligned Schottky Metal Semi-Conductor Field Effect Transistor with a relatively high operating frequency and low series resistance is proposed.
Patent
Method of making a self-aligned Schottky metal semi-conductor field effect transistor with buried source and drain
TL;DR: In this paper, a high speed VLSI Self-Aligned Schottky Metal Semi-Conductor Field Effect Transistor with buried source and drain, fabricated by the ion implantation of source/ drain areas at a predetermined range of depths followed by very localized laser annealing to electrically reactivate the amorphous buried source/drains.