Patent
Method of making a self-aligned Schottky metal semi-conductor field effect transistor with buried source and drain
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TLDR
In this paper, a high speed VLSI Self-Aligned Schottky Metal Semi-Conductor Field Effect Transistor with buried source and drain, fabricated by the ion implantation of source/ drain areas at a predetermined range of depths followed by very localized laser annealing to electrically reactivate the amorphous buried source/drains.Abstract:
A semi-conductor structure and particulrly a high speed VLSI Self-Aligned Schottky Metal Semi-Conductor Field Effect Transistor with buried source and drain, fabricated by the ion implantation of source and drain areas at a predetermined range of depths followed by very localized laser annealing to electrically reactivate the amorphous buried source and drain areas thereby providing effective vertical separation of the channel from the buried source and drain respectively Accordingly, spatial separations between the self-aligned gate-to-drain, and gate-to-source can be relatively very closely controlled by varying the doping intensity and duration of the implantation thereby reducing the series resistance and increasing the operating speedread more
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References
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Forming controlled inset regions by ion implantation and laser bombardment
TL;DR: A semiconductor integrated circuit structure in which the inset regions are ion implanted and laser annealed to maintain substantially the dimensions of the implantation and the method of forming inset implanted regions having controlled dimensions is described in this article.
Patent
Formation of multilayer dopant distributions in a semiconductor
Harry J. Leamy,Thomas E. Seidel +1 more
TL;DR: In this paper, a method of making solid state devices having multilayer dopant distributions, including p-p+ and n-n+ junctions, was proposed. But this method is not suitable for high conductivity paths.
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Method of forming Schottky-I2 L devices by implantation and laser bombardment
TL;DR: In this article, a method for manufacturing a semiconductor device having a Schottky junction is described, which comprises a process for burying first and second regions of a second conductivity type spaced from each other in a semiconducting body of a first conductivities type, a process to locally disposing a first interconnection layer made of a metal on a surface region of the semiconductor body facing the first region, forming an insulating film on the surface of the first interconnect layer by subjecting the surface to anodic oxidation, ion-implanting an impurity
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