p+-n-p+ BARITT diodes have produced maximum output powers of the order of 100 mW. A large-signal computer simulation is used to evaluate the device conductance as a function of the r.f. voltage amplitude, and hence the output power. It is concluded that, to. obtain optimum output power, (a) the n-region doping density should be increased and (b) the chip series resistance should be minimised.

BARITT-diode large-signal performance

A one-dimensional small-signal noise model of p+nvp+and metal (M) nvp+BARITT diodes has been developed. Included in the model is a detailed description of the physical mechanisms which are present near the injecting contact of either type of diode. The equations resulting from the model have been solved to give the small-signal diode noise measure and admittance as functions of diode parameters and operating conditions. A comparison of the noise performance of p+nvp+diodes with that of metal nvp+diodes, shows that the latter possess inherently larger noise measures. A detailed examination of p+nvp+diode small-signal noise measures above X-band frequencies, shows that minimum noise measures of order 10 dB can be maintained up to at least 20 GHz.

Small-signal BARITT noise measures

A literature search on semiconductor device modeling was performed and a bibliography of 486 references was compiled Electrical and Electronics Abstracts and Engineering Index of January 1970 to May 1974 were the main sources used in this search Selected articles from the literature prior to 1970 are also included in this bibliography For easy access to the needed references, the bibliography is divided into twenty-nine sections A cross reference is given at the end of each section

A bibliography on semiconductor device modeling

Five silicon (Si) p++–n−–n++ samples were grown at various doping concentrations (1.0 × 1017–2.2 × 1017 cm−3) in an n− layer by using the reduced-pressure CVD technique. By using these samples, 30 × 2 µm2 single-drift (SD) impact-ionization avalanche transit-time (IMPATT) diodes were processed with Si-based monolithic millimeter-wave integrated circuit (SIMMWIC) technology.1 , 2 ) The samples within a small process window exhibited a large negative differential resistance at approximately the avalanche frequency, as confirmed by small-signal S-parameter characterization. A model based on depletion width was given to explain the conditions for the appearance of the negative differential IMPATT resistance, which is the basis of millimeter-wave amplifier and oscillator applications. Furthermore, a measurement-based small-signal lumped-element model was established to describe the IMPATT functionality from the circuit component aspect. This lumped-element model shows a negative differential resistance within a well-defined range in the given element parameters, which can explain the experimental observations.

https://iopscience.iop.org/article/10.7567/JJAP.55.04EF03/pdf

S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode

A small-signal lumped model of a grown junction transistor ig developed. By using state-space techniques, the model is used to predict the small-signal common-emitter short-circuit input impedance.

State-space analysis of two-dimensional current flow in the base region of a junction transistorf

The development of a lumped model for small-signal carrier-field interactions in an IMPATT diode results in a set of state equations. Using state-space analysis techniques, the equations are solved for the small-signal impedance of a general IMPATT diode as a function of dc bias current and frequency. Read, p-n, and p-i-n diodes are studied using realistic values for saturation carrier velocities and carrier-ionization rates. Curves indicating the influence of diode physical properties on the small-signal impedance are presented. By combining state equations describing the behavior of the external microwave circuit with the diode state equations, the small-signal oscillation frequency and threshold dc bias current of a coaxial IMPATT oscillator are determined.

State-Space Analysis of General IMPATT Diode Small-Signal Lumped Models

A small signal lumped model of a general IMPATT diode is presented. By applying state space analysis techniques the model is used to predict the small signal impedance of both pn and pin IMPATT diodes as a function of frequency and d.c. bias current. A lumped element equivalent circuit for the microwave cavity in a Read diode coaxial oscillator is derived. Using a state space description of the diode-cavity configuration, the variation of small signal oscillation frequency with d.c. bias current is evaluated.

Small signal lumped model for IMPATT diodes

The set of ordinary differential equations resulting from analysis of a lumped model of a microwave oscillator incorporating an n+pp+IMPATT diode in a simple external circuit is solved using a standard predictor-corrector method. D.C. results suggest that a five lump model may be used to describe the diode behaviour. Investigation of the steady state oscillation properties of the circuit shows that the simple five lump model at valid at r.f. voltage swings less than 30% of the diode breakdown voltage. At higher r.f. swings more lumps are needed for accurate results.

Derivation of a large signal IMPATT diode oscillator lumped model

The excitation of magnetostatic mode pairs by a pump magnetic field applied parallel to the static magnetic field, and the application of this phenomenon as a ferrimagnetic amplifier, are discussed. A description is given of an experimental study of magnetostatic mode pumping using a swept magnetic field display. An investigation of the behaviour of low frequency oscillations which accompany magnetostatic mode excitation is followed by a study of their effect on mode pumping. Results are given which differ from those previously reported. A method of obtaining further information on the origin of the high noise figure of ferrimagnetic amplifiers is proposed.

Factors Influencing Amplification using Parallel Pumped Magnetostatic Modes

A precise method for the characterization of an encapsulated microwave diode, using an iterative computer procedure, is described. An accurate equivalent circuit for mount and package is obtained, and used in the estimation of the small signal properties of an IMPATT diode, from slotted-line measurements. Consistent diode junction parameters are obtained for various mount configurations. Agreement is obtained between the measured and predicted oscillation frequency of a radial-line cavity IMPATT oscillator, to within experimental error.

J. A. C. Stewart

Papers

State-Space Analysis of General IMPATT Diode Small-Signal Lumped Models

Small signal lumped model for IMPATT diodes

Derivation of a large signal IMPATT diode oscillator lumped model

Factors Influencing Amplification using Parallel Pumped Magnetostatic Modes

Small signal characterization of IMPATT diodes