J
J. G. Mavroides
Researcher at Massachusetts Institute of Technology
Publications - 22
Citations - 1016
J. G. Mavroides is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Band gap & Bismuth. The author has an hindex of 15, co-authored 22 publications receiving 1002 citations. Previous affiliations of J. G. Mavroides include École Normale Supérieure.
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Photoelectrolysis of water in cells with TiO2 anodes
TL;DR: In this paper, a photogalvanic TiO 2 -Pt cell was used for photo-electrolysis of water, and the internal quantum efficiencies were shown to be close to 100%.
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Statistics and Galvanomagnetic Effects in Germanium and Silicon with Warped Energy Surfaces
Benjamin Lax,J. G. Mavroides +1 more
TL;DR: In this article, a method for calculating the statistical properties and galvanomagnetic effects of Ge and Si for weak magnetic fields was developed for the use of the Boltzmann transport theory.
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Infrared Magnetoreflection in Bismuth. I. High Fields
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Cyclotron Resonance in Indium Antimonide at High Magnetic Fields
TL;DR: In this paper, the effects of dc magnetic field on room temperature pulsed magnetic field infrared cyclotron resonance data were analyzed using the k\ifmmode\cdot\else\textperiodcentered\fi{}p perturbation technique.
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Magnetoreflection studies on the band structure of bismuth-antimony alloys☆
E.J. Tichovolsky,J. G. Mavroides +1 more
TL;DR: In this paper, magnetoreflection results in the Bi-Sb alloys indicate that the bismuth L-point energy gap changes with alloying; these results suggest an experimentally consistent pattern for the variation of the energy bands at the L-and T-points in the Brillouin zone for the BiSbAs system in which spin-orbit interaction appears to be the primary variable.