Single-layered molybdenum disulphide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for the next generation of nanoelectronics. Here, we report the controlled vapour phase synthesis of molybdenum disulphide atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. Furthermore, a nucleation-controlled strategy is established to systematically promote the formation of large-area, single- and few-layered films. Using high-resolution electron microscopy imaging, the atomic structure and morphology of the grains and their boundaries in the polycrystalline molybdenum disulphide atomic layers are examined, and the primary mechanisms for grain boundary formation are evaluated. Grain boundaries consisting of 5- and 7- member rings are directly observed with atomic resolution, and their energy landscape is investigated via first-principles calculations. The uniformity in thickness, large grain sizes, and excellent electrical performance signify the high quality and scalable synthesis of the molybdenum disulphide atomic layers.

Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers

Single layered molybdenum disulfide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for next generation nanoelectronics. Here, we report the controlled vapor phase synthesis of molybdenum disulfide atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. Furthermore, a nucleation-controlled strategy is established to systematically promote the formation of large-area single- and few-layered films. The atomic structure and morphology of the grains and their boundaries in the polycrystalline molybdenum disulfide atomic layers are examined and first-principles calculations are applied to investigate their energy landscape. The electrical properties of the atomic layers are examined and the role of grain boundaries is evaluated. The uniformity in thickness, large grain sizes, and excellent electrical performance of these materials signify the high quality and scalable synthesis of the molybdenum disulfide atomic layers.

Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

The hydrogen evolution reaction (HER) on carbon supported MoS2nanoparticles is investigated and compared to findings with previously published work on Au(111) supported MoS2. An investigation into MoS2oxidation is presented and used to quantify the surface concentration of MoS2. Other metal sulfides with morphologies similar to MoS2 such as WS2, cobalt-promoted WS2, and cobalt-promoted MoS2 were also investigated in the search for improved HER activity. Experimental findings are compared to density functional theory (DFT) calculated values for the hydrogen binding energies (ΔGH) on each system.

Hydrogen evolution on nano-particulate transition metal sulfides.

A three-dimensional Ni foam deposited with graphene layers on surfaces is used as a conducting solid support to load MoS(x) catalysts for electrocatalytic hydrogen evolution. The graphene sheets grown on Ni foams provide robust protection and efficiently increase the stability in acid. The superior performance of hydrogen evolution is attributed to the relatively high catalyst loading weight as well as its relatively low resistance.

https://ir.nctu.edu.tw:443/bitstream/11536/21225/1/000314600900011.pdf

Highly Efficient Electrocatalytic Hydrogen Production by MoSx Grown on Graphene‐Protected 3D Ni Foams

The thinnest semiconductor, molybdenum disulfide (MoS2) monolayer, exhibits promising prospects in the applications of optoelectronics and valleytronics. A uniform and highly crystalline MoS2 monolayer in a large area is highly desirable for both fundamental studies and substantial applications. Here, utilizing various aromatic molecules as seeding promoters, a large-area, highly crystalline, and uniform MoS2 monolayer was achieved with chemical vapor deposition (CVD) at a relatively low growth temperature (650 °C). The dependence of the growth results on the seed concentration and on the use of different seeding promoters is further investigated. It is also found that an optimized concentration of seed molecules is helpful for the nucleation of the MoS2. The newly identified seed molecules can be easily deposited on various substrates and allows the direct growth of monolayer MoS2 on Au, hexagonal boron nitride (h-BN), and graphene to achieve various hybrid structures.

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Role of the seeding promoter in MoS2 growth by chemical vapor deposition.

The sulfidation of crystalline MoO3 and the thermal decomposition of (NH4)2MoO2S2 to MoS2 via an {MoOS2} oxysulfide intermediate have been studied by means of monochromatic X-ray photoelectron spectroscopy (XPS) and infrared emission spectroscopy (IRES) Several basic steps of the sulfidation reaction could be resolved and explained in terms of the structure of crystalline MoO3 The sulfidation reaction starts at low temperatures with an exchange of terminal O2- ligands of the oxide for S2- by reaction with H2S from the sulfiding atmosphere In subsequent Mo−S redox reactions, bridging S22- ligands and Mo5+ centers are formed Lattice relaxation and further sulfur uptake are the main processes before, at temperatures above 200 °C, direct reactions with H2 occur, during which the Mo5+ centers are converted into the 4+ oxidation state The decomposition experiments with (NH4)2MoO2S2 show that terminal O2- ligands serve as the reactive sites The conversion of terminal MoOt to MoS entities and the subsequent

/pdf/basic-reaction-steps-in-the-sulfidation-of-crystalline-moo3-ub1x9ubuyz.pdf

J. H. M. C. van Wolput

Papers

Basic reaction steps in the sulfidation of crystalline MoO3 to MoS2, as studied by X-ray photoelectron and infrared emission spectroscopy