J
J.J. Wainer
Researcher at IBM
Publications - 7
Citations - 241
J.J. Wainer is an academic researcher from IBM. The author has contributed to research in topics: Conductance & Magnetic field. The author has an hindex of 6, co-authored 7 publications receiving 239 citations.
Papers
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Journal ArticleDOI
Observation of resonant tunneling in silicon inversion layers.
TL;DR: At the lowest temperatures, well-isolated, large conductance peaks whose width and temperature dependence are only consistent with resonant tunneling and are inconsistent with Mott hopping are observed.
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Origin of the Peaked Structure in the Conductance of One-Dimensional Silicon Accumulation Layers
TL;DR: In this article, the authors make extensive studies of the temperature, gate voltage, and electric field dependences of the conductance peaks in small silicon inversion layers in order to distinguish between resonant-tunneling models and a hopping model.
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Electronic transport in small strongly localized structures
TL;DR: In this article, the authors review some recent results on the low-temperature transport properties (T < 4K) of very small silicon metal-oxide field effect transistors in the insulating regime of conduction.
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One-dimensional conductance in silicon mosfet's
TL;DR: In this paper, a review of experiments on the conductance of 1D MOSFET's is given, with particular attention paid to the strong localization regime and the structure of conductance as a function of gate voltage.
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Hopping conduction in quasi-one-dimensional systems
TL;DR: A review of hopping conduction in small MOSFET devices at low temperatures is given in this paper, where the theoretical predictions of Mott, extended to the quasi-one-dimensional limit, are compared with experiments and it is shown that in the limit where only a few states exist within a few k B T of the Fermi energy the conduction properties take on a radically different form.