J. M. Gaines

TL;DR: In this paper, the authors report the successful growth of GaAs/AlAs superlattices having interface planes tilted with respect to the substrate surface plane, and demonstrate the growth of quantum wire-like structures produced by placing short sections of TSL between horizontal layers of AlAs.

TL;DR: In this paper, the authors report the successful growth of GaAs/AlAs superlattices having interface planes tilted with respect to the substrate surface plane, and demonstrate the growth of quantum wire-like structures produced by placing short sections of TSL between horizontal layers of AlAs.

TL;DR: In this paper, the RHEED specular beam profiles produced by GaAs vicinal surfaces are examined and correlated with the surface topography, and it is found that the shape of split peaks produced with the incident beam normal to step edges is a measure of surface orientation over lengths on the order of terrace widths, but is not sensitive to short range roughness on the terraces themselves.

TL;DR: In this article, reflection high-energy electron diffraction (RHEED) intensity oscillations were observed during the molecular beam epitaxy growth of gallium antimonide (GaSb), aluminum antimonyide (AlSb) and indium arsenide (InAs) compounds.

TL;DR: In this paper, a theory incorporating the optical selection rule for a one-dimensional quantum system was developed, and optical anisotropy was observed in photoluminescence excitation spectra of a quantum well wire array prepared directly by molecular-beam epitaxy on a tilted substrate.