J
J.M. McGarrity
Researcher at Yahoo!
Publications - 26
Citations - 957
J.M. McGarrity is an academic researcher from Yahoo!. The author has contributed to research in topics: Silicon carbide & Electron mobility. The author has an hindex of 15, co-authored 26 publications receiving 889 citations.
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Two‐stage process for buildup of radiation‐induced interface states
TL;DR: In this article, the interface state buildup in wetoxide MOS capacitors under positive bias was studied as a function of time following pulsed e −beam irradiation, and the buildup was found to be a two-stage process.
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Dependence of Interface-State Buildup on Hole Generation and Transport in Irradiated MOS Capacitors
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Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor
TL;DR: In this paper, a quasi-two-dimensional depth dependent Coulomb mobility model for scattering due to interface and oxide charge, along with existing models for other scattering mechanisms, and an in-house drift diffusion device simulator tailored for SiC MOSFETs, were combined simulation and experimental analyses.
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Silicon carbide JFET radiation response
TL;DR: In this paper, total dose and neutron-induced displacement damage effect studies are reported for n-channel, 2- mu m channel length, depletion mode junction-field-effect-transistors (JFETs) fabricated on 6H-silicon carbide.
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Physics-based numerical modeling and characterization of 6H-silicon-carbide metal–oxide–semiconductor field-effect transistors
Stephen K. Powell,Neil Goldsman,J.M. McGarrity,Joseph Bernstein,Charles Scozzie,Aivars J. Lelis +5 more
TL;DR: In this article, a detailed analysis of silicon-carbide (SiC) metal-oxide-semiconductor field effect transistor (MOSFET) physics is performed Measurements of currentvoltage characteristics are taken A device simulator is developed based on the drift-diffusion equations.