: A revised and updated annotated bibliography on atomic transition probabilities covering the literature from 1914 through October 1977 is presented It contains approximately 2400 references and is divided into four main sections, with each article assigned a number The first section contains a listing, by number, of articles of general interest The second section lists by number all articles containing numerical data; it is arranged by element and stage of ionization and is further subdivided according to theoretical and experimental methods, comments, and compilations The third section contains a listing of all articles, including number, authors, title, and journal reference; it is arranged by year of publication and alphabetically by authors names within the year All foreign language papers are identified, and their titles are translated into English The final section contains a listing of all authors and the numbers of the papers they have authored or co-authored

Bibliography on Atomic Transition Probabilities: 1914 Through October 1977

A compendium and critical review of neutral atom resonance line oscillator strengths for atomic absorption analysis

Atomic vapor produced by a frequency‐doubled, pulsed Nd:YAG laser with its beam focused on a silicon plate has been used to deposit amorphous silicon films on substrate at room temperature. Time‐resolved measurements on the emission lines from vaporized Si show that the laser‐irradiated surface is kept at temperatures high enough to maintain a significant amount of vaporization for approximately 40 ns after the 7‐ns laser pulse. Since intense pulsed atomic beams are used, the silicon films grow at high speed in excess of 106 A/s.

Dynamics of laser‐induced vaporization for ultrafast deposition of amorphous silicon films

A lifetime method based on measuring the fluorescence decay following pulsed laser excitation of sputtered metal vapours is described. The method is applicable to neutral and singly ionised atoms of a wide range of elements, including the highly refractory metals. New lifetime results are reported for some levels of Zr I and Zr II.

http://iopscience.iop.org/article/10.1088/0022-3700/14/1/002/pdf

Determination of atomic lifetimes using pulsed laser excitation of sputtered metal vapours

The beam-foil method has been used to measure lifetimes for six levels in Si I. The results are compared with emission data and theoretical values. Improved experimental values are also given for a number of previously measured levels in Si II-Si IV.

Lifetimes for Excited Levels in Si I-Si IV

The mean lifetimes of 25 optical levels of Mg I, Al l, Si I, Cr I, Co I, and Mn I were determined with the phase-shift method. The measured values can be used to calibrate previously determined scales of relative oscillator strengths. (auth)

J. Marek

Papers

Lifetime measurements of optical levels for 6 elements of astrophysical interest