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J.P. Renard

Researcher at University of Paris-Sud

Publications -  87
Citations -  1631

J.P. Renard is an academic researcher from University of Paris-Sud. The author has contributed to research in topics: Magnetization & Antiferromagnetism. The author has an hindex of 19, co-authored 87 publications receiving 1574 citations.

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Presumption for a Quantum Energy Gap in the Quasi-One-Dimensional S?=?1 Heisenberg Antiferromagnet Ni(C2H8N2)2NO2(ClO4)

TL;DR: In this article, magnetic susceptibility and inelastic neutron scattering experiments have been performed in the nearly ideal one-dimensional Heisenberg antiferromagnet with spin one, Ni(C2H8N2)2NO2ClO4.
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Enhanced magnetoresistance of ultrathin (Au/Co)n multilayers with perpendicular anisotropy.

TL;DR: In this article, magnetoresistance measurements were performed on two Au/Co/Au sandwiches with ultrathin cobalt layers (0.32 and 0.76 nm) and on a bilayer Co bilayer with 0.75 nm Co. The easy magnetization axis is shown to be perpendicular to the films, in agreement with previous magnetization and ferromagnetic resonance measurements.
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Influence of controlled oxygen vacancies on the magnetotransport and magnetostructural phenomena in La 0.85 Sr 0.15 MnO 3-δ single crystals

TL;DR: In this article, single crystals of a hole-doped system with various oxygen vacancies from 0 to 0.055 were used to investigate the effect of oxygen deficiency on the Curie temperature and electrical conductivity.
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Direct observation of the Haldane gap in NENP by far-infrared spectroscopy in high magnetic fields.

TL;DR: The first direct and comprehensive determination of the energy levels involved in the Haldane gap occurrence are reported: the singlet ground state and the first triplet excited state.
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Competition between Spin-Peierls Phase and Three-Dimensional Antiferromagnetic Order in CuGe1-xSixO3

TL;DR: In this paper, a qualitative interpretation of the phase diagram (T, x) is given, where the Si doping has a drastic effect on the spin-Peierls temperature TSP which decreases at TSP (x)/TSP (0) 1-50x at low Si concentrations.