J.P. Villotte

TL;DR: For the first time, optimized current/voltage waveforms for maximum PAE of microwave field effect transistors (FET's) have been measured and confirm the theory on high efficiency microwave power amplifiers.

TL;DR: Results prove the capabilities offered by this new nonlinear time-domain measurement system to aid in designing optimized power amplifiers or frequency multipliers and provide valuable information for nonlinear transistor model validation.

TL;DR: In this article, an active load-pull technique is proposed for the measurement of highly mismatched power transistors, which consists of using suitable mismatched sources to drive the device under test, and an electronic simulation of highly reflective loads very close to the edge of the Smith chart can be achieved.

TL;DR: In this article, a novel time domain large signal characterization of microwave transistors is described, based on the use of three separated active loops, allowing synthesizing the load impedances of the device under test at the first three harmonic frequencies.

TL;DR: In this article, the authors proposed an active load-pull setup providing a solution to the problem of large signal measurement of highly mismatched microwave power transistors by using an appropriate mismatched power source to drive the output port of the device under test (DUT).