The energy balance at substrate surfaces during plasma processing

The energy influx delivered by an rf plasma to a metal substrate has been studied by a calorimetric method with a thermal probe. By changing the substrate voltage, the influence of the kinetic energy of the charge carriers to the thermal power could be determined. The measured energy influx for an argon plasma can be explained mainly by ions, electrons, and their recombination. In the case of an oxygen plasma, where the energy influx is under comparable conditions about 50% higher, also other transfer mechanisms such as surface-aided atom association and relaxation of rovibrational states have to be taken into consideration.

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Energy influx from an rf plasma to a substrate during plasma processing

Self-formation of a nanonet of fluorinated carbon nanowires on the Si surface by combined etching in fluorine-containing plasma

On the ion energy transfer to the substrate during titanium deposition in a hollow cathode arc discharge

Experimentally unraveling the energy flux originating from a DC magnetron sputtering source

The thermal energy flux which a rf plasma delivers to a silicon surface has been studied by a calorimetric method. The energy flux appears to be proportional to the product of the average ion energy and the ion flux, which was calculated from the Bohm criterion using measured plasma parameters. Furthermore, the value and energy dependence of the kinetic energy transfer efficiency (about 0.5) suggests that the microscopic interaction of impinging ions in the eV range with a silicon surface can be described by a binary collision model.

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J Schulze

Papers

Energy transfer from radio frequency sheath accelerated CF+3 and Ar+ ions to a Si wafer