J
J. W. Garland
Researcher at University of Illinois at Chicago
Publications - 36
Citations - 1049
J. W. Garland is an academic researcher from University of Illinois at Chicago. The author has contributed to research in topics: Paramagnetism & Magnetic susceptibility. The author has an hindex of 16, co-authored 36 publications receiving 1002 citations. Previous affiliations of J. W. Garland include Oak Ridge National Laboratory & Free University of Berlin.
Papers
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Modeling the optical dielectric function of semiconductors: Extension of the critical-point parabolic-band approximation.
TL;DR: A model is proposed for the line shape of the optical dielectric function of zinc-blende semiconductors and is found to be more generally valid than the harmonic-oscillator model, the critical-point (CP) model, or the model of Adachi.
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Effect of lattice disorder on the superconducting transition temperature.
TL;DR: In this paper, a theory was presented to explain the dependence of the superconducting transition temperature on the changes in the phonon frequency spectrum and electronic density of states which result from lattice disorder.
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Modeling the optical dielectric function of the alloy system AlxGa1-xAs.
TL;DR: The proposed model enables us to determine accurately the critical point energies and linewidths of Al x Ga 1-x As as a function of w and x, which is compared with spectroscopic ellipsometry data between 1.5 and 6.0 eV.
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Comparative Study of Defects in Semiconductors by Electrolyte Electroreflectance and Spectroscopic Ellipsometry
TL;DR: In this paper, the theory of electroreflectance is generalized to include these effects and it is shown that, because of the electrostriction and polarization of defects by the modulating electric field, electro reflectance spectra are more affected by defects than are third-derivative spectra from ellipsometry data.
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Study of the interface of undoped and p‐doped ZnSe with GaAs and AlAs
TL;DR: In this article, the authors used electrolyte electroreflectance (EER) to characterize ZnSe/GaAs and ZnS/AlAs interfaces and demonstrated that these interfaces are type I.