The fairly recent availability of commercial focused ion beam (FIB) microscopes has led to rapid development of their applications for materials science. FIB instruments have both imaging and micromachining capabilities at the nanometer–micrometer scale; thus, a broad range of fundamental studies and technological applications have been enhanced or made possible with FIB technology. This introductory article covers the basic FIB instrument and the fundamentals of ion–solid interactions that lead to the many unique FIB capabilities as well as some of the unwanted artifacts associated with FIB instruments. The four topical articles following this introduction give overviews of specific applications of the FIB in materials science, focusing on its particular strengths as a tool for characterization and transmission electron microscopy sample preparation, as well as its potential for ion beam fabrication and prototyping.

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Focused Ion Beam Microscopy and Micromachining

Silicon germanium (SiGe) has moved from being a research material to accounting for a small but significant percentage of manufactured semiconductor devices. This percentage is predicted to increase substantially as SiGe begins to be used in complementary metal oxide semiconductor (CMOS) technology in the future to substantially improve performance. It is the development of Si/SiGe heterostructures which has enabled band structure and strain engineering allowing Si/SiGe to be used in many different ways to improve conventional microelectronic device performance along with allowing new concepts to be explored. This paper presents a review of the material properties, growth techniques, band structure and the main electronic devices of the Si/SiGe heterostructure system. In particular, the important device technologies in mainstream microelectronics of the SiGe heterostructure bipolar transistor (HBT) and strained-Si CMOS will be reviewed before future device and optoelectronics concepts are explored.

https://iopscience.iop.org/article/10.1088/0268-1242/19/10/R02/pdf

Si/SiGe heterostructures: from material and physics to devices and circuits

Lithographic Imaging Techniques for the Formation of Nanoscopic Features

Electrospraying utilises electrical forces for liquid atomisation. Droplets obtained by this method are highly charged to a fraction of the Rayleigh limit. The advantage of electrospraying is that the droplets can be extremely small, down to the order of 10’s nanometres, and the charge and size of the droplets can be controlled to some extent be electrical means. Motion of the charged droplets can be controlled by electric field. The deposition efficiency of the charged spray on an object is usually higher than that for uncharged droplets. Electrospray is, or potentially can be applied to many processes in industry and in scientific instruments manufacturing. The paper reviews electrospray methods and devices, including liquid metal ion sources, used for thin film deposition. This technique is applied in modern material technologies, microelectronics, micromachining, and nanotechnology.

Electrospray droplet sources for thin film deposition

The technology of high‐resolution focused ion beams has advanced dramatically in the past 15 years as focusing systems have evolved from laboratory instruments producing minuscule current densities to high current density tools which have sparked an important new process: direct micromachining at the micrometer level. This development has been due primarily to the exploitation of field emission ion sources and in particular the liquid‐metal ion source. Originally developed in the early 1960’s as a byproduct of the development of electrostatic rocket engines, the liquid‐metal ion source was adapted for focused beam work in the late 1970’s, when it was demonstrated that submicrometer focused ion beams could be produced with current densities greater than 1 A cm−2. Ions can be produced with liquid‐metal ion sources from elements including Al, As, Au, B, Be, Bi, Cs, Cu, Ga, Ge, Fe, In, Li, P, Pb, Pd, Si, Sn, and Zn. In the past decade, focused ion beam systems with liquid‐metal ion sources have had a signific...

High‐resolution focused ion beams

A liquid‐metal gallium‐ion source was imaged by unity‐magnification single‐gap accelerating lens with a postlens deflector to form a focused scanning probe. We report the dependence of the probe diameter and probe current on the lens acceptance half‐angle. The results range between probe diameters of 1000 and 5000 A at currents of 0.12–3.0 nA for half‐angles of 1.2–6 mrad. The current density and brightness at the target for the 1000‐A‐diam 57‐kV probe were 1.5 A/cm2 and 3.3×106 A/cm2 sr, respectively. Astigmatic probes were also produced with dimensions smaller than 1000 A.

A high‐intensity scanning ion probe with submicrometer spot size

Ion beams have increased usefulness for high‐resolution microstructure fabrication if they are patterned to small dimensions before they strike a target. First, results are presented of maskless micromachining, doping, and resist exposure with a scanning focused gallium ion beam of sub‐1000‐A diameter. Secondly, an ion‐beam‐transmission mask is described, and results are presented showing 1X replicated mask patterns with 0.6‐μm features that were exposed in PMMA resist by irradiating the mask with a conventional size 150‐kV proton beam. The potentials of ion‐beam lithography using masks and focused ion beams are discussed.

J. W. Ward

Papers

A high‐intensity scanning ion probe with submicrometer spot size

High-resolution, ion-beam processes for microstructure fabrication