J
J.-Y. Kim
Researcher at Korea University
Publications - 8
Citations - 1130
J.-Y. Kim is an academic researcher from Korea University. The author has contributed to research in topics: PEDOT:PSS & Porphyrin. The author has an hindex of 5, co-authored 7 publications receiving 1038 citations.
Papers
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Journal ArticleDOI
Enhancement of electrical conductivity of poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) by a change of solvents
TL;DR: In this paper, the authors measured the DC conductivity of poly(3,4-ethylenedioxythiophene) (PEDOT) doped with poly(4-styrenesulfonate) (PSS) with various organic solvents.
Journal ArticleDOI
Flexible and transparent organic film speaker by using highly conducting PEDOT/PSS as electrode
C.S. Lee,C.S. Lee,J.-Y. Kim,Doh-Kwon Lee,Jinsoo Joo,B.G. Wagh,S. Han,Young Whoan Beag,S.K. Koh +8 more
TL;DR: In this article, a flexible organic film speaker (FOFS) was fabricated with ion-assisted reaction (IAR) treated poly(vinylidene fluoide) (PVDF) as active layer and poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate)(PEDOT/PSS), indium tin oxide (ITO), or copper (Cu) as electrode.
Journal ArticleDOI
Organic Based Flexible Speaker Through Enhanced Conductivity of PEDOT/PSS with Various Solvents
C.S. Lee,C.S. Lee,J.-Y. Kim,Doh-Kwon Lee,Y.K. Koo,Jinsoo Joo,S. Han,Young Whoan Beag,S.K. Koh +8 more
TL;DR: In this paper, a flexible organic film speaker was fabricated with ion assisted reaction (IAR) treated poly (vinylidene fluoide) (PVDF) as active layer and poly (3,4-ethylenedioxythiophene)/poly (4-styrenesulfonate) (PSS), indium tin oxide (ITO) and Cu as electrodes DC conductivity (σ DC ) of pristine PEDOT/PSS increases from 08 to 80 S/cm with adding various organic solvents [dimethyl sulfoxide (DMS
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Preparation of new semiconducting tetraphenylethynyl porphyrin derivatives and their high-performing organic field-effect transistors
TL;DR: In this paper, the design and synthesis of new solution processable semiconducting π-extended porphyrin derivatives H2TPEP and ZnTPEP were introduced and their use in the fabrication of high-performing thin film and single-crystal OFET devices were described.
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Characterization of GaN nanowires and light-emitting devices based on a GaN nanowire-PVK nanocomposite
TL;DR: In this paper, high-quality GaN nanowires have been synthesized by applying the laser ablation method, and the light emitting devices (LEDs) with the structure of ITO-coated glass/PEDOT:PSS/GaN-nodes/PVK nanocomposites/DCM-doped Alq 3 /Li:Al have been fabricated and examined together with the investigations of luminescence and device characteristics.