Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Methods and systems for utilizing design data in combination with inspection data

A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

Lithographic apparatus, and device manufacturing method

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

Methods and apparatus for a data transmission in a communication system are disclosed. Each of a subset of plural access terminals desiring to transmit user data in an interval transmits a request to transmit in the interval to an access network. The access network makes a decision to schedule at least one of the subset of the plural access terminals to transmit in the interval in accordance with the request. At least one access point of the access network transmits the decision to the plural access terminals.

Method and system for a data transmission in a communication system

A method for determining overlay between a first grating (110) and a second grating (120) on a substrate (100), the second grating (120) on top of the first grating(110), the second grating (120) having substantially identical pitch (P1) as the first grating (110), the second and first gratings forming a composite grating (110,120), the method including providing a first illumination beam (IB) for illuminating the composite grating (110,120) under an angle of incidence (β) along a first horizontal direction (D1) along the surface of the substrate, and measuring a first intensity (i+) of a first order diffracted beam (B+) from the composite grating (110,120); providing a second illumination beam for illuminating the composite grating (11θ!i2O) under the angle of incidence (-β) along a second horizontal direction (D2) along the surface of the substrate, wherein the second horizontal direction (D2) is opposite to the first horizontal direction (DI)1 and measuring a second intensity (i-) of a minus first order diffracted beam (B-) from the composite grating (110,120).

Diffraction Based Overlay Metrology Tool and Method

A method for controlling a photolithography process includes providing a wafer having a first grating structure and a second grating structure overlying the first grating structure; illuminating at least a portion of the first and second grating structures with a light source; measuring light reflected from the illuminated portion of the first and second grating structures to generate a reflection profile; determining an overlay error between the first and second grating structures based on the reflection profile; and determining at least one parameter of an operating recipe for a photolithography stepper based on the determined overlay error. A processing line includes a photolithography stepper, a first metrology tool, and a controller. The photolithography stepper is adapted to process wafers in accordance with an operating recipe. The first metrology tool is adapted to receive a wafer having a first grating structure and a second grating structure overlying the first grating structure. The metrology tool includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the first and second grating structures. The detector is adapted to measure light reflected from the illuminated portion of the first and second grating structures to generate a reflection profile. The data processing unit is adapted to determine an overlay error between the first and second grating structures based on the reflection profile. The controller is adapted to determine at least one parameter of the operating recipe of the photolithography stepper based on the determined overlay error.

Method and apparatus for controlling photolithography overlay registration

A method for aligning wafers includes providing a wafer having at least a first and a second alignment mark formed thereon, each alignment mark comprising a grating structure; illuminating the grating structure of the first alignment mark with a light source; measuring light reflected from the grating Structure of the first alignment mark to generate a first reflection profile; illuminating the grating structure of the second alignment mark with the light source; measuring light reflected from the grating structure of the second alignment mark to generate a second reflection profile; and selecting one of the first and second alignment marks for aligning the wafer based on the first and second reflection profiles. A processing line includes a metrology tool and a process controller. The metrology tool is adapted to receive a wafer having at least a first and a second alignment mark formed thereon. Each alignment mark comprises a grating structure. The metrology tool is further adapted to illuminate the grating structure of the first alignment mark with a light source, measure light reflected from the grating structure of the first alignment mark to generate a first reflection profile, illuminate the grating structure of the second alignment mark with the light source, and measure light reflected from the grating structure of the second alignment mark to generate a second reflection profile. The process controller is adapted to select one of the first and second alignment marks for aligning the wafer based on the first and second reflection profiles.

Method and apparatus for selecting wafer alignment marks based on film thickness variation

Methods of using adaptive sampling techniques based upon categorization of process variations, and a system for performing same are disclosed. In one illustrative embodiment, the method comprises acquiring metrology data regarding at least one process operation performed on a plurality of substrates in accordance with an initial metrology sampling plan, providing the acquired metrology dam to a controller that identifies process variations in the at least one process operation based upon the acquired metrology data and further identifies a plurality of categories of the process variations. The method further comprises creating, using the controller, a modified metrology sampling plan based upon a relative weighing of the identified categories of the process variations, wherein the modified metrology sampling plan differs from the initial metrology sampling plan in at least one aspect, and acquiring metrology data from at least one subsequently processed wafer in accordance with the modified neology sampling plan.

Methods of using adaptive sampling techniques based upon categorization of process variations, and system for performing same

A method includes providing a wafer having a first grating structure and a second grating structure formed in a photoresist layer. At least a portion of the first and second grating structures is illuminated with a light source. Light reflected from the illuminated portion of the first and second grating structures is measured to generate a reflection profile. Misregistration between the first and second grating structures is determined based on the reflection profile. A processing line includes a photolithography stepper, a metrology tool, and a controller. The photolithography stepper is adapted to process wafers in accordance with an operating recipe. The metrology tool is adapted to receive a wafer processed in the stepper. The wafer has a first grating structure and a second grating structure formed in a photoresist layer. The metrology tool includes a light source, a detector, and a data processing unit.

Method and apparatus for identifying misregistration in a complimentary phase shift mask process

A method for characterizing features includes measuring a dimensional characteristic of a first grating structure; illuminating at least a portion of a first feature and the first grating structure, the first feature being formed over at least a portion of the first grating structure; measuring light reflected from the illuminated portion of the first feature and the first grating structure to generate a reflection profile; selecting at least one reference reflection profile based on the measured dimensional characteristic of the first grating structure, comparing the generated reflection profile to the selected reference reflection profile; and determining a characteristic of the first feature based on the comparison between the measured reflection profile and the selected reference reflection profile.

James Broc Stirton

Papers

Method and apparatus for controlling photolithography overlay registration

Method and apparatus for selecting wafer alignment marks based on film thickness variation

Methods of using adaptive sampling techniques based upon categorization of process variations, and system for performing same

Method and apparatus for identifying misregistration in a complimentary phase shift mask process

Method and apparatus for determining feature characteristics using scatterometry