Advanced Micro Devices

About: Advanced Micro Devices is a company organization based out in Markham, Ontario, Canada. It is known for research contribution in the topics: Layer (electronics) & Gate oxide. The organization has 9027 authors who have published 16657 publications receiving 293238 citations. The organization is also known as: AMD & Advanced Micro Devices, Inc..

The gem5 simulator

Abstract: The gem5 simulation infrastructure is the merger of the best aspects of the M5 [4] and GEMS [9] simulators. M5 provides a highly configurable simulation framework, multiple ISAs, and diverse CPU models. GEMS complements these features with a detailed and exible memory system, including support for multiple cache coherence protocols and interconnect models. Currently, gem5 supports most commercial ISAs (ARM, ALPHA, MIPS, Power, SPARC, and x86), including booting Linux on three of them (ARM, ALPHA, and x86).The project is the result of the combined efforts of many academic and industrial institutions, including AMD, ARM, HP, MIPS, Princeton, MIT, and the Universities of Michigan, Texas, and Wisconsin. Over the past ten years, M5 and GEMS have been used in hundreds of publications and have been downloaded tens of thousands of times. The high level of collaboration on the gem5 project, combined with the previous success of the component parts and a liberal BSD-like license, make gem5 a valuable full-system simulation tool.

Bispectrum estimation: A digital signal processing framework

Abstract: It is the purpose of this tutorial paper to place bispectrum estimation in a digital signal processing framework in order to aid engineers in grasping the utility of the available bispectrum estimation techniques, to discuss application problems that can directly benefit from the use of the bispectrum, and to motivate research in this area Three general reasons are behind the use of bispectrum in signal processing and are addressed in the paper: to extract information due to deviations from normality, to estimate the phase of parametric signals, and to detect and characterize the properties of nonlinear mechanisms that generate time series

RazorII: In Situ Error Detection and Correction for PVT and SER Tolerance

Abstract: Traditional adaptive methods that compensate for PVT variations need safety margins and cannot respond to rapid environmental changes. In this paper, we present a design (RazorII) which implements a flip-flop with in situ detection and architectural correction of variation-induced delay errors. Error detection is based on flagging spurious transitions in the state-holding latch node. The RazorII flip-flop naturally detects logic and register SER. We implement a 64-bit processor in 0.13 mum technology which uses RazorII for SER tolerance and dynamic supply adaptation. RazorII based DVS allows elimination of safety margins and operation at the point of first failure of the processor. We tested and measured 32 different dies and obtained 33% energy savings over traditional DVS using RazorII for supply voltage control. We demonstrate SER tolerance on the RazorII processor through radiation experiments.

FinFET scaling to 10 nm gate length

Abstract: While the selection of new "backbone" device structure in the era of post-planar CMOS is open to a few candidates, FinFET and its variants show great potential in scalability and manufacturability for nanoscale CMOS In this paper we report the design, fabrication, performance, and integration issues of double-gate FinFETs with the physical gate length being aggressively shrunk down to 10 nm and the fin width down to 12 nm These MOSFETs are believed to be the smallest double-gate transistors ever fabricated Excellent short-channel performance is observed in devices with a wide range of gate lengths (10/spl sim/105 nm) The observed short-channel behavior outperforms any reported single-gate silicon MOSFETs Due to the [110] channel crystal orientation, hole mobility in the fabricated p-channel FinFET exceeds greatly that in a traditional planar MOSFET At 105 nm gate length, the p-channel FinFET shows a record-high transconductance of 633 /spl mu/S//spl mu/m at a V/sub dd/ of 12 V Working CMOS FinFET inverters are also demonstrated

MOSFET having a double gate

Abstract: A double gate MOSFET. The MOSFET includes a bottom gate electrode and a bottom gate dielectric disposed over the bottom gate electrode. A semiconductor body region is disposed over the bottom gate dielectric and the bottom gate electrode, and disposed between a source and a drain. A top gate electrode is disposed over the body. A top gate dielectric separates the top gate electrode and the body, the top gate electrode and the bottom gate electrode defining a channel within the body and interposed between the source and the drain. At least one of the bottom gate dielectric or the top gate dielectric is formed from a high-K material. A method of forming a double gate MOSFET is also disclosed where a semiconductor film used to form a body is recrystallized using a semiconductor substrate as a seed crystal.